Light emission from direct bandgap hexagonal SiGe

J. E.M. Haverkort, Y. Ren, A. Dijkstra, E. Fadaly, M. A. Verheijen, G. Reithmaier, D. Busse, S. Botti, M. A. Verheijen, J. Finley, E. P.A.M. Bakkers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

Original languageEnglish
Title of host publicationIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580439
DOIs
StatePublished - 2018
EventIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Switzerland
Duration: 2 Jul 20185 Jul 2018

Publication series

NameOptics InfoBase Conference Papers
VolumePart F101-IPRSN 2018
ISSN (Electronic)2162-2701

Conference

ConferenceIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
Country/TerritorySwitzerland
CityZurich
Period2/07/185/07/18

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