LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

J. Rimmelspacher; R. Weigel; A. Hagelauer; V. Issakov

doi:10.1109/SIRF.2019.8709120

LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

J. Rimmelspacher
, R. Weigel
, A. Hagelauer
, V. Issakov

Infineon Technologies AG

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

This paper presents a 60 GHz dual-core push-push VCO in a 45 nm partially depleted (PD) RF Silicon-on-Insulator (SOI) CMOS technology. The cores are coupled inductively via differential inductors. The best measured phase noise at 1 MHz offset from a 63 GHz carrier is -94.4 dBc/Hz. The wideband continuous frequency-tuning-range (FTR) is 16 %. The DC power dissipation is 76 mW including fundamental 30 GHz and second harmonic (H2) 60 GHz output buffers at 1 V power supply voltage. The measurement results of a reference single-core VCO design proves the relative phase noise improvement of the implemented core-coupling technique. The chip area excluding pads is 0.09 mm².

Original language	English
Title of host publication	2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538659502
DOIs	https://doi.org/10.1109/SIRF.2019.8709120
State	Published - 7 May 2019
Externally published	Yes
Event	19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019 - Orlando, United States Duration: 20 Jan 2019 → 23 Jan 2019

Publication series

Name	2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019

Conference

Conference	19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019
Country/Territory	United States
City	Orlando
Period	20/01/19 → 23/01/19

Keywords

CMOS technology
System-on-Chip
millimeter-wave VCO
silicon-on-insulator
wideband

Access to Document

10.1109/SIRF.2019.8709120

Cite this

Rimmelspacher, J., Weigel, R., Hagelauer, A., & Issakov, V. (2019). LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology. In 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019 Article 8709120 (2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIRF.2019.8709120

Rimmelspacher, J. ; Weigel, R. ; Hagelauer, A. et al. / LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology. 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019).

@inproceedings{04537a7022084709b626f3614e9e7745,

title = "LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology",

abstract = "This paper presents a 60 GHz dual-core push-push VCO in a 45 nm partially depleted (PD) RF Silicon-on-Insulator (SOI) CMOS technology. The cores are coupled inductively via differential inductors. The best measured phase noise at 1 MHz offset from a 63 GHz carrier is -94.4 dBc/Hz. The wideband continuous frequency-tuning-range (FTR) is 16 \%. The DC power dissipation is 76 mW including fundamental 30 GHz and second harmonic (H2) 60 GHz output buffers at 1 V power supply voltage. The measurement results of a reference single-core VCO design proves the relative phase noise improvement of the implemented core-coupling technique. The chip area excluding pads is 0.09 mm2.",

keywords = "CMOS technology, System-on-Chip, millimeter-wave VCO, silicon-on-insulator, wideband",

author = "J. Rimmelspacher and R. Weigel and A. Hagelauer and V. Issakov",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019 ; Conference date: 20-01-2019 Through 23-01-2019",

year = "2019",

month = may,

day = "7",

doi = "10.1109/SIRF.2019.8709120",

language = "English",

series = "2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019",

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Rimmelspacher, J, Weigel, R, Hagelauer, A & Issakov, V 2019, LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology. in 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019., 8709120, 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019, Institute of Electrical and Electronics Engineers Inc., 19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019, Orlando, United States, 20/01/19. https://doi.org/10.1109/SIRF.2019.8709120

LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology. / Rimmelspacher, J.; Weigel, R.; Hagelauer, A. et al.
2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8709120 (2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

AU - Rimmelspacher, J.

AU - Weigel, R.

AU - Hagelauer, A.

AU - Issakov, V.

PY - 2019/5/7

Y1 - 2019/5/7

N2 - This paper presents a 60 GHz dual-core push-push VCO in a 45 nm partially depleted (PD) RF Silicon-on-Insulator (SOI) CMOS technology. The cores are coupled inductively via differential inductors. The best measured phase noise at 1 MHz offset from a 63 GHz carrier is -94.4 dBc/Hz. The wideband continuous frequency-tuning-range (FTR) is 16 %. The DC power dissipation is 76 mW including fundamental 30 GHz and second harmonic (H2) 60 GHz output buffers at 1 V power supply voltage. The measurement results of a reference single-core VCO design proves the relative phase noise improvement of the implemented core-coupling technique. The chip area excluding pads is 0.09 mm2.

AB - This paper presents a 60 GHz dual-core push-push VCO in a 45 nm partially depleted (PD) RF Silicon-on-Insulator (SOI) CMOS technology. The cores are coupled inductively via differential inductors. The best measured phase noise at 1 MHz offset from a 63 GHz carrier is -94.4 dBc/Hz. The wideband continuous frequency-tuning-range (FTR) is 16 %. The DC power dissipation is 76 mW including fundamental 30 GHz and second harmonic (H2) 60 GHz output buffers at 1 V power supply voltage. The measurement results of a reference single-core VCO design proves the relative phase noise improvement of the implemented core-coupling technique. The chip area excluding pads is 0.09 mm2.

KW - CMOS technology

KW - System-on-Chip

KW - millimeter-wave VCO

KW - silicon-on-insulator

KW - wideband

UR - https://www.scopus.com/pages/publications/85066037580

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DO - 10.1109/SIRF.2019.8709120

M3 - Conference contribution

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T3 - 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019

BT - 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019

Y2 - 20 January 2019 through 23 January 2019

ER -

Rimmelspacher J, Weigel R, Hagelauer A, Issakov V. LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology. In 2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8709120. (2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2019). doi: 10.1109/SIRF.2019.8709120

LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology

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