Lattice relaxation due to hydrogen passivation in boron-doped silicon

M. Stutzmann; J. Harsanyi; A. Breitschwerdt; C. P. Herrero

doi:10.1063/1.99052

Lattice relaxation due to hydrogen passivation in boron-doped silicon

M. Stutzmann, J. Harsanyi, A. Breitschwerdt, C. P. Herrero

Max Planck Institute for Solid State Research

Research output: Contribution to journal › Article › peer-review

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Abstract

The influence of hydrogen on the lattice constant of boron-doped crystalline silicon is studied by x-ray diffraction. It is found that hydrogen passivation of the boron acceptors is accompanied by a noticeable expansion of the passivated layer. A value of +(2.5±0.5)×10^- ²⁴ cm³/atom is obtained for the expansion coefficient due to B-H complexes.

Original language	English
Pages (from-to)	1667-1669
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	20
DOIs	https://doi.org/10.1063/1.99052
State	Published - 1988
Externally published	Yes

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title = "Lattice relaxation due to hydrogen passivation in boron-doped silicon",

abstract = "The influence of hydrogen on the lattice constant of boron-doped crystalline silicon is studied by x-ray diffraction. It is found that hydrogen passivation of the boron acceptors is accompanied by a noticeable expansion of the passivated layer. A value of +(2.5±0.5)×10- 24 cm3/atom is obtained for the expansion coefficient due to B-H complexes.",

author = "M. Stutzmann and J. Harsanyi and A. Breitschwerdt and Herrero, {C. P.}",

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AU - Stutzmann, M.

AU - Harsanyi, J.

AU - Breitschwerdt, A.

AU - Herrero, C. P.

PY - 1988

Y1 - 1988

N2 - The influence of hydrogen on the lattice constant of boron-doped crystalline silicon is studied by x-ray diffraction. It is found that hydrogen passivation of the boron acceptors is accompanied by a noticeable expansion of the passivated layer. A value of +(2.5±0.5)×10- 24 cm3/atom is obtained for the expansion coefficient due to B-H complexes.

AB - The influence of hydrogen on the lattice constant of boron-doped crystalline silicon is studied by x-ray diffraction. It is found that hydrogen passivation of the boron acceptors is accompanied by a noticeable expansion of the passivated layer. A value of +(2.5±0.5)×10- 24 cm3/atom is obtained for the expansion coefficient due to B-H complexes.

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U2 - 10.1063/1.99052

DO - 10.1063/1.99052

M3 - Article

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SN - 0003-6951

VL - 52

SP - 1667

EP - 1669

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Lattice relaxation due to hydrogen passivation in boron-doped silicon

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