Laterally self-ordered silicon-germanium islands with optimized confinement properties

Thomas Zabel; Narayan Sircar; Norman Hauke; Josef Zweck; Markus Döblinger; Michael Kaniber; Jonathan J. Finley; Gerhard Abstreiter; Yasuhiko Arakawa; Dominique Bougeard

doi:10.1063/1.4818331

Laterally self-ordered silicon-germanium islands with optimized confinement properties

Thomas Zabel, Narayan Sircar, Norman Hauke, Josef Zweck, Markus Döblinger, Michael Kaniber, Jonathan J. Finley, Gerhard Abstreiter, Yasuhiko Arakawa, Dominique Bougeard

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band structure simulations. A comparison between these band structure simulations and photoluminescence spectroscopy shows that such islands have a significant three dimensional spatial electron-hole wave function overlap. In addition, we show that this spatial wave function overlap overcompensates a weak wave function spreading in k-space.

Original language	English
Article number	063105
Journal	Applied Physics Letters
Volume	103
Issue number	6
DOIs	https://doi.org/10.1063/1.4818331
State	Published - 5 Aug 2013

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10.1063/1.4818331

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title = "Laterally self-ordered silicon-germanium islands with optimized confinement properties",

abstract = "We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band structure simulations. A comparison between these band structure simulations and photoluminescence spectroscopy shows that such islands have a significant three dimensional spatial electron-hole wave function overlap. In addition, we show that this spatial wave function overlap overcompensates a weak wave function spreading in k-space.",

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AU - Zabel, Thomas

AU - Sircar, Narayan

AU - Hauke, Norman

AU - Zweck, Josef

AU - Döblinger, Markus

AU - Kaniber, Michael

AU - Finley, Jonathan J.

AU - Abstreiter, Gerhard

AU - Arakawa, Yasuhiko

AU - Bougeard, Dominique

PY - 2013/8/5

Y1 - 2013/8/5

N2 - We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band structure simulations. A comparison between these band structure simulations and photoluminescence spectroscopy shows that such islands have a significant three dimensional spatial electron-hole wave function overlap. In addition, we show that this spatial wave function overlap overcompensates a weak wave function spreading in k-space.

AB - We present an analysis of the electronic confinement properties of self-assembled islands forming via silicon and germanium co-deposition in molecular beam epitaxy. This approach allows the fabrication of laterally self-ordered three dimensional islands in the Stranski-Krastanow growth mode. Using a systematic structural analysis, we derive a realistic fit-parameter free island model for band structure simulations. A comparison between these band structure simulations and photoluminescence spectroscopy shows that such islands have a significant three dimensional spatial electron-hole wave function overlap. In addition, we show that this spatial wave function overlap overcompensates a weak wave function spreading in k-space.

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JO - Applied Physics Letters

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ER -

Laterally self-ordered silicon-germanium islands with optimized confinement properties

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