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Lateral structuring of silicon thin films by interference crystallization
M. Heintze
, P. V. Santos
, C. E. Nebel
,
M. Stutzmann
TUM Emeriti of Excellence
Universität Stuttgart
Max Planck Institute for Solid State Research
Walter Schottky Institut
Research output
:
Contribution to journal
›
Article
›
peer-review
48
Scopus citations
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Keyphrases
Crystallization
100%
Multicrystalline Silicon
100%
Silicon Thin Film
100%
Amorphous Silicon Thin Film
50%
Energy Density
50%
Pulsed Laser
50%
Amorphous Phase
50%
Submicron
50%
Simultaneous Growth
50%
C-Si
50%
Holography
50%
High Pulse Energy
50%
Selectively Etching
50%
Silane Plasma
50%
Optical Grid
50%
Material Science
Silicon
100%
Microcrystalline Silicon
100%
Thin Films
100%
Amorphous Silicon
50%
Silane
50%
Energy Density
50%
Laser Pulse
50%
Engineering
Microcrystalline Silicon
100%
Thin film silicon
100%
Amorphous Phase
50%
Flux Density
50%