Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

M. K. Kelly; C. E. Nebel; M. Stutzmann; G. Böhm

Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

M. K. Kelly, C. E. Nebel, M. Stutzmann, G. Böhm

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Walter Schottky Institut

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Abstract

A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization.

Original language	English
Pages (from-to)	1984
Number of pages	1
Journal	Applied Physics Letters
State	Published - 1995

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title = "Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings",

abstract = "A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization.",

author = "Kelly, {M. K.} and Nebel, {C. E.} and M. Stutzmann and G. B{\"o}hm",

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journal = "Applied Physics Letters",

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T1 - Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

AU - Kelly, M. K.

AU - Nebel, C. E.

AU - Stutzmann, M.

AU - Böhm, G.

PY - 1995

Y1 - 1995

N2 - A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization.

AB - A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization.

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M3 - Article

AN - SCOPUS:36449002028

SN - 0003-6951

SP - 1984

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

Abstract

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