Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

M. K. Kelly; C. E. Nebel; M. Stutzmann; G. Böhm

doi:10.1063/1.115647

Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

M. K. Kelly, C. E. Nebel, M. Stutzmann, G. Böhm

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization.

Original language	English
Pages (from-to)	1984-1986
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	14
DOIs	https://doi.org/10.1063/1.115647
State	Published - 1996

Access to Document

10.1063/1.115647

Cite this

@article{bf536e4a29bf420b9423fdd8d4c7c311,

title = "Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings",

abstract = "A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization.",

author = "Kelly, {M. K.} and Nebel, {C. E.} and M. Stutzmann and G. B{\"o}hm",

year = "1996",

doi = "10.1063/1.115647",

language = "English",

volume = "68",

pages = "1984--1986",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

AU - Kelly, M. K.

AU - Nebel, C. E.

AU - Stutzmann, M.

AU - Böhm, G.

PY - 1996

Y1 - 1996

N2 - A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization.

AB - A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization.

UR - http://www.scopus.com/inward/record.url?scp=0030126376&partnerID=8YFLogxK

U2 - 10.1063/1.115647

DO - 10.1063/1.115647

M3 - Article

AN - SCOPUS:0030126376

SN - 0003-6951

VL - 68

SP - 1984

EP - 1986

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

Abstract

Access to Document

Other files and links

Fingerprint

Cite this