Lateral photodetector devices on Si/SiGe heterostructures

C. Engel; P. Baumgartner; M. Holzmann; J. F. Nützel; G. Abstreiter

doi:10.1016/S0040-6090(96)09245-0

Lateral photodetector devices on Si/SiGe heterostructures

C. Engel, P. Baumgartner, M. Holzmann, J. F. Nützel, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We present two types of lateral photodetector devices on Si/Si_0.7Ge_0.3. These lateral structures are realized by focused laser beam (FLB) induced local B-doping of an n-type modulation doped heterostructure. The introduced dopants form a potential modulation in the plane of the two-dimensional electron gas. The resulting barriers can be used to constrict an electron channel and define a photoconductor on the micrometer scale. Since the FLB process does not introduce damage in the channel, the written lines work also as active region in lateral n-p-n phototransistor structures. Responsivities up to 10⁵ A W^-1 are achieved with a spatial resolutions of a few micrometers.

Original language	English
Pages (from-to)	347-350
Number of pages	4
Journal	Thin Solid Films
Volume	294
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(96)09245-0
State	Published - 15 Feb 1997

Keywords

Germanium
Heterostructures
Silicon

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10.1016/S0040-6090(96)09245-0

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@article{72c2c5e1011d4a4c988d3ce5741ee57e,

title = "Lateral photodetector devices on Si/SiGe heterostructures",

abstract = "We present two types of lateral photodetector devices on Si/Si0.7Ge0.3. These lateral structures are realized by focused laser beam (FLB) induced local B-doping of an n-type modulation doped heterostructure. The introduced dopants form a potential modulation in the plane of the two-dimensional electron gas. The resulting barriers can be used to constrict an electron channel and define a photoconductor on the micrometer scale. Since the FLB process does not introduce damage in the channel, the written lines work also as active region in lateral n-p-n phototransistor structures. Responsivities up to 105 A W-1 are achieved with a spatial resolutions of a few micrometers.",

keywords = "Germanium, Heterostructures, Silicon",

author = "C. Engel and P. Baumgartner and M. Holzmann and N{\"u}tzel, \{J. F.\} and G. Abstreiter",

year = "1997",

month = feb,

day = "15",

doi = "10.1016/S0040-6090(96)09245-0",

language = "English",

volume = "294",

pages = "347--350",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Lateral photodetector devices on Si/SiGe heterostructures

AU - Engel, C.

AU - Baumgartner, P.

AU - Holzmann, M.

AU - Nützel, J. F.

AU - Abstreiter, G.

PY - 1997/2/15

Y1 - 1997/2/15

N2 - We present two types of lateral photodetector devices on Si/Si0.7Ge0.3. These lateral structures are realized by focused laser beam (FLB) induced local B-doping of an n-type modulation doped heterostructure. The introduced dopants form a potential modulation in the plane of the two-dimensional electron gas. The resulting barriers can be used to constrict an electron channel and define a photoconductor on the micrometer scale. Since the FLB process does not introduce damage in the channel, the written lines work also as active region in lateral n-p-n phototransistor structures. Responsivities up to 105 A W-1 are achieved with a spatial resolutions of a few micrometers.

AB - We present two types of lateral photodetector devices on Si/Si0.7Ge0.3. These lateral structures are realized by focused laser beam (FLB) induced local B-doping of an n-type modulation doped heterostructure. The introduced dopants form a potential modulation in the plane of the two-dimensional electron gas. The resulting barriers can be used to constrict an electron channel and define a photoconductor on the micrometer scale. Since the FLB process does not introduce damage in the channel, the written lines work also as active region in lateral n-p-n phototransistor structures. Responsivities up to 105 A W-1 are achieved with a spatial resolutions of a few micrometers.

KW - Germanium

KW - Heterostructures

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=0031072451&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(96)09245-0

DO - 10.1016/S0040-6090(96)09245-0

M3 - Article

AN - SCOPUS:0031072451

SN - 0040-6090

VL - 294

SP - 347

EP - 350

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Lateral photodetector devices on Si/SiGe heterostructures

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Keywords

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