Lateral ordering of self-assembled Ge islands

Jian Hong Zhu; K. Brunner; G. Abstreiter; O. Kienzle; F. Ernst

doi:10.1016/S0040-6090(98)01245-0

Lateral ordering of self-assembled Ge islands

Jian Hong Zhu, K. Brunner, G. Abstreiter, O. Kienzle, F. Ernst

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Self-assembled Ge islands are weakly ordered along the intrinsic step direction when grown directly on well-prepared biatomic-stepped vicinal Si(001) surfaces. Prominent two-dimensional ordering of Ge islands is realized when a SiGe/Si multilayer is predeposited on such vicinal Si(001) surfaces and step-bunching takes place. The ordering helps to narrow the size distribution of the Ge islands. This provides an effective method for controlling the Ge islands in both ordering and size.

Original language	English
Pages (from-to)	252-255
Number of pages	4
Journal	Thin Solid Films
Volume	336
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)01245-0
State	Published - 30 Dec 1998

Keywords

Atomic force microscopy
Ge island
Molecular beam epitaxy
Self-ordering
Step-bunching
Vicinal surface

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10.1016/S0040-6090(98)01245-0

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title = "Lateral ordering of self-assembled Ge islands",

abstract = "Self-assembled Ge islands are weakly ordered along the intrinsic step direction when grown directly on well-prepared biatomic-stepped vicinal Si(001) surfaces. Prominent two-dimensional ordering of Ge islands is realized when a SiGe/Si multilayer is predeposited on such vicinal Si(001) surfaces and step-bunching takes place. The ordering helps to narrow the size distribution of the Ge islands. This provides an effective method for controlling the Ge islands in both ordering and size.",

keywords = "Atomic force microscopy, Ge island, Molecular beam epitaxy, Self-ordering, Step-bunching, Vicinal surface",

author = "Zhu, {Jian Hong} and K. Brunner and G. Abstreiter and O. Kienzle and F. Ernst",

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T1 - Lateral ordering of self-assembled Ge islands

AU - Zhu, Jian Hong

AU - Brunner, K.

AU - Abstreiter, G.

AU - Kienzle, O.

AU - Ernst, F.

PY - 1998/12/30

Y1 - 1998/12/30

N2 - Self-assembled Ge islands are weakly ordered along the intrinsic step direction when grown directly on well-prepared biatomic-stepped vicinal Si(001) surfaces. Prominent two-dimensional ordering of Ge islands is realized when a SiGe/Si multilayer is predeposited on such vicinal Si(001) surfaces and step-bunching takes place. The ordering helps to narrow the size distribution of the Ge islands. This provides an effective method for controlling the Ge islands in both ordering and size.

AB - Self-assembled Ge islands are weakly ordered along the intrinsic step direction when grown directly on well-prepared biatomic-stepped vicinal Si(001) surfaces. Prominent two-dimensional ordering of Ge islands is realized when a SiGe/Si multilayer is predeposited on such vicinal Si(001) surfaces and step-bunching takes place. The ordering helps to narrow the size distribution of the Ge islands. This provides an effective method for controlling the Ge islands in both ordering and size.

KW - Atomic force microscopy

KW - Ge island

KW - Molecular beam epitaxy

KW - Self-ordering

KW - Step-bunching

KW - Vicinal surface

UR - http://www.scopus.com/inward/record.url?scp=0032310615&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(98)01245-0

DO - 10.1016/S0040-6090(98)01245-0

M3 - Article

AN - SCOPUS:0032310615

SN - 0040-6090

VL - 336

SP - 252

EP - 255

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Lateral ordering of self-assembled Ge islands

Abstract

Keywords

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