Keyphrases
Room Temperature
100%
Lasing
100%
Core-shell Nanowires
100%
GaAs-AlGaAs
100%
Surface Recombination
50%
High Performance
25%
Material Composition
25%
Power Density
25%
Core-shell
25%
Gallium Arsenide
25%
Near-infrared
25%
Ultrasmall
25%
Composition Profile
25%
Non-radial
25%
Characteristic Temperature
25%
Semiconductor Nanowires
25%
AlGaAs
25%
Active Regions
25%
Low Threshold
25%
Optical Excitation
25%
Single Mode Emission
25%
Coherent Light Source
25%
III-V Semiconductors
25%
Auger Recombination
25%
Threshold Pump Power
25%
AlGaAs Nanowires
25%
High Efficiency
25%
Engineering
Gallium Arsenide
100%
Core-Shell
100%
Shell Nanowires
100%
Aluminium Gallium Arsenide
100%
Room Temperature
100%
Nanowire
66%
Power Density
33%
Material Composition
33%
Active Region
33%
Pump Power
33%
III-V Semiconductor
33%
Mode Emission
33%
Light Source
33%
Auger Recombination
33%
Material Science
Nanowire
100%
Gallium Arsenide
100%
Aluminium Gallium Arsenide
100%
Surface (Surface Science)
66%
Density
33%
Linewidth
33%
III-V Semiconductor
33%
Phase Composition
33%
Physics
Room Temperature
100%
Lasing
100%
Nanowire
100%
Temperature Characteristics
25%
Linewidth
25%
Light Source
25%
Near Infrared
25%
Coherent Light
25%
Photoexcitation
25%
Chemistry
Ambient Reaction Temperature
100%
Nanowire
100%
Surface Recombination
66%
Phase Composition
33%
Photoexcitation
33%
Linewidth
33%
Auger Recombination
33%