Laser-sintered thin films of doped SiGe nanoparticles

B. Stoib; T. Langmann; S. Matich; T. Antesberger; N. Stein; S. Angst; N. Petermann; R. Schmechel; G. Schierning; D. E. Wolf; H. Wiggers; M. Stutzmann; M. S. Brandt

doi:10.1063/1.4726041

Laser-sintered thin films of doped SiGe nanoparticles

B. Stoib, T. Langmann, S. Matich, T. Antesberger, N. Stein, S. Angst, N. Petermann, R. Schmechel, G. Schierning, D. E. Wolf, H. Wiggers, M. Stutzmann, M. S. Brandt

TUM Emeriti of Excellence

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21 Scopus citations

Abstract

We present a study of the morphology and the thermoelectric properties of short-pulse laser-sintered (LS) nanoparticle (NP) thin films, consisting of SiGe alloy NPs or composites of Si and Ge NPs. Laser-sintering of spin-coated NP films in vacuum results in a macroporous percolating network with a typical thickness of 300 nm. The Seebeck coefficient for LS samples is the same as for bulk samples prepared by current-assisted sintering and is typical for degenerate doping. The electrical conductivity of LS films is influenced by two-dimensional percolation effects and rises with increasing temperature, approximately following a power-law.

Original language	English
Article number	231907
Journal	Applied Physics Letters
Volume	100
Issue number	23
DOIs	https://doi.org/10.1063/1.4726041
State	Published - 4 Jun 2012

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title = "Laser-sintered thin films of doped SiGe nanoparticles",

abstract = "We present a study of the morphology and the thermoelectric properties of short-pulse laser-sintered (LS) nanoparticle (NP) thin films, consisting of SiGe alloy NPs or composites of Si and Ge NPs. Laser-sintering of spin-coated NP films in vacuum results in a macroporous percolating network with a typical thickness of 300 nm. The Seebeck coefficient for LS samples is the same as for bulk samples prepared by current-assisted sintering and is typical for degenerate doping. The electrical conductivity of LS films is influenced by two-dimensional percolation effects and rises with increasing temperature, approximately following a power-law.",

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T1 - Laser-sintered thin films of doped SiGe nanoparticles

AU - Stoib, B.

AU - Langmann, T.

AU - Matich, S.

AU - Antesberger, T.

AU - Stein, N.

AU - Angst, S.

AU - Petermann, N.

AU - Schmechel, R.

AU - Schierning, G.

AU - Wolf, D. E.

AU - Wiggers, H.

AU - Stutzmann, M.

AU - Brandt, M. S.

PY - 2012/6/4

Y1 - 2012/6/4

N2 - We present a study of the morphology and the thermoelectric properties of short-pulse laser-sintered (LS) nanoparticle (NP) thin films, consisting of SiGe alloy NPs or composites of Si and Ge NPs. Laser-sintering of spin-coated NP films in vacuum results in a macroporous percolating network with a typical thickness of 300 nm. The Seebeck coefficient for LS samples is the same as for bulk samples prepared by current-assisted sintering and is typical for degenerate doping. The electrical conductivity of LS films is influenced by two-dimensional percolation effects and rises with increasing temperature, approximately following a power-law.

AB - We present a study of the morphology and the thermoelectric properties of short-pulse laser-sintered (LS) nanoparticle (NP) thin films, consisting of SiGe alloy NPs or composites of Si and Ge NPs. Laser-sintering of spin-coated NP films in vacuum results in a macroporous percolating network with a typical thickness of 300 nm. The Seebeck coefficient for LS samples is the same as for bulk samples prepared by current-assisted sintering and is typical for degenerate doping. The electrical conductivity of LS films is influenced by two-dimensional percolation effects and rises with increasing temperature, approximately following a power-law.

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U2 - 10.1063/1.4726041

DO - 10.1063/1.4726041

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SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

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ER -

Laser-sintered thin films of doped SiGe nanoparticles

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