TY - JOUR
T1 - Laser-processing for patterned and free-standing nitride films
AU - Kelly, M. K.
AU - Ambacher, O.
AU - Dimitrov, R.
AU - Angerer, H.
AU - Handschuh, R.
AU - Stutzmann, M.
PY - 1997
Y1 - 1997
N2 - Films of GaN and related materials can be processed by methods that invoke thermal decomposition, induced by intense illumination with a pulsed laser. At elevated temperatures, the nitride semiconductors undergo decomposition, with the effusion of nitrogen gas. We exploit this mechanism as an alternative to etching for the patterning of nitride films and for the opening of buried interfaces. Films of GaN have been etched to a depth of 1 μm in less than three seconds. This interface decomposition allows in particular the separation of nitride films from transparent growth substrates such as sapphire.
AB - Films of GaN and related materials can be processed by methods that invoke thermal decomposition, induced by intense illumination with a pulsed laser. At elevated temperatures, the nitride semiconductors undergo decomposition, with the effusion of nitrogen gas. We exploit this mechanism as an alternative to etching for the patterning of nitride films and for the opening of buried interfaces. Films of GaN have been etched to a depth of 1 μm in less than three seconds. This interface decomposition allows in particular the separation of nitride films from transparent growth substrates such as sapphire.
UR - http://www.scopus.com/inward/record.url?scp=0031363674&partnerID=8YFLogxK
U2 - 10.1557/proc-482-973
DO - 10.1557/proc-482-973
M3 - Conference article
AN - SCOPUS:0031363674
SN - 0272-9172
VL - 482
SP - 973
EP - 978
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1997 MRS Fall Meeting
Y2 - 1 December 1997 through 4 December 1997
ER -