TY - JOUR
T1 - Laser-interference crystallization of amorphous silicon
T2 - Applications and properties
AU - Nebel, C. E.
AU - Christiansen, S.
AU - Strunk, H. P.
AU - Dahlheimer, B.
AU - Karrer, U.
AU - Stutzmann, M.
PY - 1998/4
Y1 - 1998/4
N2 - The generation of two-dimensional seed arrays with periods in the range 0.5 to 10 μm in a-Si layers of 100 to 400 nm thickness on glass, using three interfering beams from a pulsed Nd: YAG laser is described. The size of the seeds depends on the applied laser intensity and varies between 100 and 1000 nm. The seeds consist of small nc-Si grains of 30 to 50 nm diameter which govern the subsequent thermal or laser-stimulated growth of large crystallites. The seeded growth phenomena and the related structural properties of the μc-Si layers measured by transmission electron, scanning electron, and atomic force microscopy are discussed.
AB - The generation of two-dimensional seed arrays with periods in the range 0.5 to 10 μm in a-Si layers of 100 to 400 nm thickness on glass, using three interfering beams from a pulsed Nd: YAG laser is described. The size of the seeds depends on the applied laser intensity and varies between 100 and 1000 nm. The seeds consist of small nc-Si grains of 30 to 50 nm diameter which govern the subsequent thermal or laser-stimulated growth of large crystallites. The seeded growth phenomena and the related structural properties of the μc-Si layers measured by transmission electron, scanning electron, and atomic force microscopy are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0032048420&partnerID=8YFLogxK
U2 - 10.1002/(SICI)1521-396X(199804)166:2<667::AID-PSSA667>3.0.CO;2-Y
DO - 10.1002/(SICI)1521-396X(199804)166:2<667::AID-PSSA667>3.0.CO;2-Y
M3 - Article
AN - SCOPUS:0032048420
SN - 0031-8965
VL - 166
SP - 667
EP - 674
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 2
ER -