Laser intensity effects in carrier-envelope phase-tagged time of flight-photoemission electron microscopy

S. H. Chew, A. Gliserin, J. Schmidt, H. Bian, S. Nobis, F. Schertz, M. Kübel, Y. Y. Yang, B. Loitsch, T. Stettner, J. J. Finley, C. Späth, H. Ouacha, A. M. Azzeer, U. Kleineberg

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Abstract

A time of flight-photoemission electron microscope is combined with a single-shot stereographic above-threshold ionization phase meter for studying attosecond control of electrons in tailored plasmonic nanostructures spatially and energetically via a carrier-envelope phase tagging technique. First carrier-envelope phase-resolved measurements of gold nanoparticles on gold plane and surface roughness from a gold film show an apparent carrier-envelope phase modulation with a period of π. This modulation is found to originate from an intensity dependence of the photoelectron spectra and the carrier-envelope phase measurement rather than from an intrinsic carrier-envelope phase dependence, which is confirmed by simulations. This useful finding suggests that intensity tagging should be considered for phase tagging experiments on plasmonic nanostructures with low carrier-envelope phase sensitivity in order to correct for the intensity-related carrier-envelope phase artifact.

Original languageEnglish
Article number102
JournalApplied Physics B: Lasers and Optics
Volume122
Issue number4
DOIs
StatePublished - 1 Apr 2016

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