TY - JOUR
T1 - Laser induced melting and crystallization of boron doped amorphous silicon
AU - Nebel, C. E.
AU - Schoeniger, S.
AU - Dahlheimer, B.
AU - Stutzmann, M.
PY - 1997
Y1 - 1997
N2 - Transient reflectivity experiments have been performed to measure the dynamics of laser-induced melting of amorphous silicon (a-Si) and the crystallization to μc-Si of films with different thicknesses on Corning 7059 glass. The laser-induced melting takes place with a velocity of 13 to 24 m/s, while the solidification is about a factor 10 slower. The crystallization starts at the Si/glass interface and at the surface. In the center of the films, Si remains liquid for an extended period of time. The crystallization dynamics point towards an heterogeneous morphology of laser-crystallized Si, where the surface and the interface layers are composed of small grains and the bulk of larger grains.
AB - Transient reflectivity experiments have been performed to measure the dynamics of laser-induced melting of amorphous silicon (a-Si) and the crystallization to μc-Si of films with different thicknesses on Corning 7059 glass. The laser-induced melting takes place with a velocity of 13 to 24 m/s, while the solidification is about a factor 10 slower. The crystallization starts at the Si/glass interface and at the surface. In the center of the films, Si remains liquid for an extended period of time. The crystallization dynamics point towards an heterogeneous morphology of laser-crystallized Si, where the surface and the interface layers are composed of small grains and the bulk of larger grains.
UR - http://www.scopus.com/inward/record.url?scp=0031356347&partnerID=8YFLogxK
U2 - 10.1557/proc-467-421
DO - 10.1557/proc-467-421
M3 - Conference article
AN - SCOPUS:0031356347
SN - 0272-9172
VL - 467
SP - 421
EP - 426
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1997 MRS Spring Symposium
Y2 - 31 March 1997 through 4 April 1997
ER -