Laser direct writing of β-Co/Ga and Mn/Ga alloy microstructures from organometallic single-source precursors

A. Miehr; R. A. Fischer; O. Lehmann; M. Stuke

doi:10.1002/(SICI)1099-0712(199601)6:1<27::AID-AMO218>3.0.CO;2-E

Laser direct writing of β-Co/Ga and Mn/Ga alloy microstructures from organometallic single-source precursors

A. Miehr, R. A. Fischer, O. Lehmann, M. Stuke

Chair of Inorganic and Organometallic Chemistry

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

β-Co/Ga and Mn/Ga alloys have been deposited on various substrates by laser direct write chemical vapour deposition (LCVD) from novel single-source precursors. The preformed alloy stoichiometry of 1 :1 defined by the metal ratio of the precursors, (CO)₄Co-GaEt₂(NMe₃) (1) and (CO)₅Mn-GaEt₂(NMe₃) (2), is retained within the deposited structures. The depositions were up to 1.5 μm thick and the lateral dimension (4 μm) was determined by the diameter of the laser focus. The deposited structures were contaminated with ∼10 at. % C and O (by AES).

Original language	English
Pages (from-to)	27-32
Number of pages	6
Journal	Advanced Materials for Optics and Electronics
Volume	6
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1099-0712(199601)6:1<27::AID-AMO218>3.0.CO;2-E
State	Published - 1996

Keywords

Co/Ga
Direct writing
Mn/Ga alloys
Single-source precursor

Access to Document

10.1002/(SICI)1099-0712(199601)6:1<27::AID-AMO218>3.0.CO;2-E

Cite this

@article{c5ad8c6663c149fa95a54834835f6a24,

title = "Laser direct writing of β-Co/Ga and Mn/Ga alloy microstructures from organometallic single-source precursors",

abstract = "β-Co/Ga and Mn/Ga alloys have been deposited on various substrates by laser direct write chemical vapour deposition (LCVD) from novel single-source precursors. The preformed alloy stoichiometry of 1 :1 defined by the metal ratio of the precursors, (CO)4Co-GaEt2(NMe3) (1) and (CO)5Mn-GaEt2(NMe3) (2), is retained within the deposited structures. The depositions were up to 1.5 μm thick and the lateral dimension (4 μm) was determined by the diameter of the laser focus. The deposited structures were contaminated with ∼10 at. % C and O (by AES).",

keywords = "Co/Ga, Direct writing, Mn/Ga alloys, Single-source precursor",

author = "A. Miehr and Fischer, {R. A.} and O. Lehmann and M. Stuke",

year = "1996",

doi = "10.1002/(SICI)1099-0712(199601)6:1<27::AID-AMO218>3.0.CO;2-E",

language = "English",

volume = "6",

pages = "27--32",

journal = "Advanced Materials for Optics and Electronics",

issn = "1057-9257",

publisher = "John Wiley and Sons Ltd",

number = "1",

}

TY - JOUR

T1 - Laser direct writing of β-Co/Ga and Mn/Ga alloy microstructures from organometallic single-source precursors

AU - Miehr, A.

AU - Fischer, R. A.

AU - Lehmann, O.

AU - Stuke, M.

PY - 1996

Y1 - 1996

N2 - β-Co/Ga and Mn/Ga alloys have been deposited on various substrates by laser direct write chemical vapour deposition (LCVD) from novel single-source precursors. The preformed alloy stoichiometry of 1 :1 defined by the metal ratio of the precursors, (CO)4Co-GaEt2(NMe3) (1) and (CO)5Mn-GaEt2(NMe3) (2), is retained within the deposited structures. The depositions were up to 1.5 μm thick and the lateral dimension (4 μm) was determined by the diameter of the laser focus. The deposited structures were contaminated with ∼10 at. % C and O (by AES).

AB - β-Co/Ga and Mn/Ga alloys have been deposited on various substrates by laser direct write chemical vapour deposition (LCVD) from novel single-source precursors. The preformed alloy stoichiometry of 1 :1 defined by the metal ratio of the precursors, (CO)4Co-GaEt2(NMe3) (1) and (CO)5Mn-GaEt2(NMe3) (2), is retained within the deposited structures. The depositions were up to 1.5 μm thick and the lateral dimension (4 μm) was determined by the diameter of the laser focus. The deposited structures were contaminated with ∼10 at. % C and O (by AES).

KW - Co/Ga

KW - Direct writing

KW - Mn/Ga alloys

KW - Single-source precursor

UR - http://www.scopus.com/inward/record.url?scp=0029756408&partnerID=8YFLogxK

U2 - 10.1002/(SICI)1099-0712(199601)6:1<27::AID-AMO218>3.0.CO;2-E

DO - 10.1002/(SICI)1099-0712(199601)6:1<27::AID-AMO218>3.0.CO;2-E

M3 - Article

AN - SCOPUS:0029756408

SN - 1057-9257

VL - 6

SP - 27

EP - 32

JO - Advanced Materials for Optics and Electronics

JF - Advanced Materials for Optics and Electronics

IS - 1

ER -

Laser direct writing of β-Co/Ga and Mn/Ga alloy microstructures from organometallic single-source precursors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this