Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

C. Eisele; M. Berger; M. Nerding; H. P. Strunk; C. E. Nebel; M. Stutzmann

doi:10.1016/S0040-6090(02)01216-6

Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

C. Eisele, M. Berger, M. Nerding, H. P. Strunk, C. E. Nebel, M. Stutzmann

TUM Emeriti of Excellence

Research output: Contribution to journal › Conference article › peer-review

39 Scopus citations

Abstract

Thin films of crystalline silicon-germanium (SiGe) alloys could be an interesting material for next generation solar cells. SiGe alloys with a Ge content of approximately 80 at.% have an indirect band gap only slightly smaller than that of Si. However, the first direct optical transition occurs at approximately 1.5 eV, leading to a strongly enhanced optical absorption compared to Si. Thin μc-SiGe films were prepared by crystallization of evaporated amorphous or nanocrystalline alloys with a pulsed Nd:YAG laser, using homogeneous as well as laser interference methods to achieve lateral grain growth. Structural properties were characterized by atomic force microscopy and transmission electron microscopy. Raman measurements were performed to study possible phase separation and to analyze residual strain in the recrystallized films.

Original language	English
Pages (from-to)	176-180
Number of pages	5
Journal	Thin Solid Films
Volume	427
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)01216-6
State	Published - 3 Mar 2003
Event	E-MRS, K - Strasbourg, France Duration: 18 Jun 2003 → 21 Jun 2003

Keywords

Laser crystallization
Lateral grain growth
Optical absorption
SiGe thin films
Solar cells

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10.1016/S0040-6090(02)01216-6

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@article{55db754f2b90413ea0bf34163599dee9,

title = "Laser-crystallized microcrystalline SiGe alloys for thin film solar cells",

abstract = "Thin films of crystalline silicon-germanium (SiGe) alloys could be an interesting material for next generation solar cells. SiGe alloys with a Ge content of approximately 80 at.% have an indirect band gap only slightly smaller than that of Si. However, the first direct optical transition occurs at approximately 1.5 eV, leading to a strongly enhanced optical absorption compared to Si. Thin μc-SiGe films were prepared by crystallization of evaporated amorphous or nanocrystalline alloys with a pulsed Nd:YAG laser, using homogeneous as well as laser interference methods to achieve lateral grain growth. Structural properties were characterized by atomic force microscopy and transmission electron microscopy. Raman measurements were performed to study possible phase separation and to analyze residual strain in the recrystallized films.",

keywords = "Laser crystallization, Lateral grain growth, Optical absorption, SiGe thin films, Solar cells",

author = "C. Eisele and M. Berger and M. Nerding and Strunk, {H. P.} and Nebel, {C. E.} and M. Stutzmann",

year = "2003",

month = mar,

day = "3",

doi = "10.1016/S0040-6090(02)01216-6",

language = "English",

volume = "427",

pages = "176--180",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

note = "E-MRS, K ; Conference date: 18-06-2003 Through 21-06-2003",

}

TY - JOUR

T1 - Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

AU - Eisele, C.

AU - Berger, M.

AU - Nerding, M.

AU - Strunk, H. P.

AU - Nebel, C. E.

AU - Stutzmann, M.

PY - 2003/3/3

Y1 - 2003/3/3

N2 - Thin films of crystalline silicon-germanium (SiGe) alloys could be an interesting material for next generation solar cells. SiGe alloys with a Ge content of approximately 80 at.% have an indirect band gap only slightly smaller than that of Si. However, the first direct optical transition occurs at approximately 1.5 eV, leading to a strongly enhanced optical absorption compared to Si. Thin μc-SiGe films were prepared by crystallization of evaporated amorphous or nanocrystalline alloys with a pulsed Nd:YAG laser, using homogeneous as well as laser interference methods to achieve lateral grain growth. Structural properties were characterized by atomic force microscopy and transmission electron microscopy. Raman measurements were performed to study possible phase separation and to analyze residual strain in the recrystallized films.

AB - Thin films of crystalline silicon-germanium (SiGe) alloys could be an interesting material for next generation solar cells. SiGe alloys with a Ge content of approximately 80 at.% have an indirect band gap only slightly smaller than that of Si. However, the first direct optical transition occurs at approximately 1.5 eV, leading to a strongly enhanced optical absorption compared to Si. Thin μc-SiGe films were prepared by crystallization of evaporated amorphous or nanocrystalline alloys with a pulsed Nd:YAG laser, using homogeneous as well as laser interference methods to achieve lateral grain growth. Structural properties were characterized by atomic force microscopy and transmission electron microscopy. Raman measurements were performed to study possible phase separation and to analyze residual strain in the recrystallized films.

KW - Laser crystallization

KW - Lateral grain growth

KW - Optical absorption

KW - SiGe thin films

KW - Solar cells

UR - http://www.scopus.com/inward/record.url?scp=0037416760&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)01216-6

DO - 10.1016/S0040-6090(02)01216-6

M3 - Conference article

AN - SCOPUS:0037416760

SN - 0040-6090

VL - 427

SP - 176

EP - 180

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - E-MRS, K

Y2 - 18 June 2003 through 21 June 2003

ER -

Laser-crystallized microcrystalline SiGe alloys for thin film solar cells

Abstract

Keywords

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