Large two-level magnetoresistance effect in doped manganite grain-boundary junctions

J. B. Philipp; C. Höfener; S. Thienhaus; J. Klein; L. Alff; R. Gross

doi:10.1103/PhysRevB.62.R9248

Large two-level magnetoresistance effect in doped manganite grain-boundary junctions

J. B. Philipp, C. Höfener, S. Thienhaus, J. Klein, L. Alff, R. Gross

University of Cologne

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain-boundary junctions formed in epitaxial La_2/3Ca_1/3MnO₃ films deposited on SrTiO₃ bicrystals. For magnetic fields H applied parallel to the grain-boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain-boundary interface.

Original language	English
Pages (from-to)	R9248-R9251
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	62
Issue number	14
DOIs	https://doi.org/10.1103/PhysRevB.62.R9248
State	Published - 1 Oct 2000
Externally published	Yes

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title = "Large two-level magnetoresistance effect in doped manganite grain-boundary junctions",

abstract = "We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain-boundary junctions formed in epitaxial La2/3Ca1/3MnO3 films deposited on SrTiO3 bicrystals. For magnetic fields H applied parallel to the grain-boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain-boundary interface.",

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AU - Philipp, J. B.

AU - Höfener, C.

AU - Thienhaus, S.

AU - Klein, J.

AU - Alff, L.

AU - Gross, R.

PY - 2000/10/1

Y1 - 2000/10/1

N2 - We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain-boundary junctions formed in epitaxial La2/3Ca1/3MnO3 films deposited on SrTiO3 bicrystals. For magnetic fields H applied parallel to the grain-boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain-boundary interface.

AB - We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain-boundary junctions formed in epitaxial La2/3Ca1/3MnO3 films deposited on SrTiO3 bicrystals. For magnetic fields H applied parallel to the grain-boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain-boundary interface.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 14

ER -

Large two-level magnetoresistance effect in doped manganite grain-boundary junctions

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