Abstract
Due to the low resistance level of Impatt diodes, common 50-ohm measurement techniques yield results of low accuracy. In this paper, a simple method for determining negative resistance versus rf-current from dc-current and rf-power measurement is presented. The technique is based on the property of the Impatt diode that shows power saturation when rf-voltage exceeds one half of the dc-bias voltage. Measurement results are given for a 100 mw Impatt diode at 10 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 280-282 |
| Number of pages | 3 |
| Journal | NTZ Nachr Z NTZ Commun J |
| Volume | 27 |
| Issue number | 7 |
| State | Published - 1974 |