Abstract
Due to the low resistance level of Impatt diodes, common 50-ohm measurement techniques yield results of low accuracy. In this paper, a simple method for determining negative resistance versus rf-current from dc-current and rf-power measurement is presented. The technique is based on the property of the Impatt diode that shows power saturation when rf-voltage exceeds one half of the dc-bias voltage. Measurement results are given for a 100 mw Impatt diode at 10 GHz.
Original language | English |
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Pages (from-to) | 280-282 |
Number of pages | 3 |
Journal | NTZ Nachr Z NTZ Commun J |
Volume | 27 |
Issue number | 7 |
State | Published - 1974 |