Large Rashba Splitting in InAs Quantum Wells due to Electron Wave Function Penetration into the Barrier Layers

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Abstract

We report on zero-field spin splitting of two-dimensional electron systems. Though absent in the unbiased InAs square asymmetric quantum well (SAQW), the Rashba splitting becomes pronounced by applying a positive back-gate voltage. In our SAQW, the Rashba parameter α increases with electron density and is tuned by a factor of about 2 using an additional front gate without charging the well. We argue that the band-edge profile provides the important contribution for spin-orbit interaction due to barrier penetration of the envelope wave function. This mechanism can provide the potential for high speed implementation in spintronics.

Original languageEnglish
Pages (from-to)6074-6077
Number of pages4
JournalPhysical Review Letters
Volume84
Issue number26
DOIs
StatePublished - 2000
Externally publishedYes

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