Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager, D. C. Chrzan, E. E. Haller

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Abstract

The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

Original languageEnglish
Article number155701
JournalPhysical Review Letters
Volume97
Issue number15
DOIs
StatePublished - 2006
Externally publishedYes

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