Large melting-point hysteresis of Ge nanocrystals embedded in SiO2

Q. Xu, I. D. Sharp, C. W. Yuan, D. O. Yi, C. Y. Liao, A. M. Glaeser, A. M. Minor, J. W. Beeman, M. C. Ridgway, P. Kluth, J. W. Ager, D. C. Chrzan, E. E. Haller

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125 Scopus citations


The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (±17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.

Original languageEnglish
Article number155701
JournalPhysical Review Letters
Issue number15
StatePublished - 2006
Externally publishedYes


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