Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff

Michael K. Kelly; Robert P. Vaudo; Vivek M. Phanse; Lutz Goergens; Oliver Ambacher; Martin Stutzmann

doi:10.1143/jjap.38.l217

Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff

Michael K. Kelly, Robert P. Vaudo, Vivek M. Phanse, Lutz Goergens, Oliver Ambacher, Martin Stutzmann

TUM Emeriti of Excellence

Technical University of Munich

Research output: Contribution to journal › Article › peer-review

327 Scopus citations

Abstract

Free-standing GaN, nearly equal in area to the original 2 inch wafer, was produced from 250-300 μm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE). The thick films were separated from the growth substrate by laser-induced liftoff, using a pulsed laser to thermally decompose a thin layer of GaN at the film-substrate interface. Sequentially scanned pulses were employed and the liftoff was performed at elevated temperature (>600 °C) to relieve postgrowth bowing. After liftoff, the bow is only slight or absent in the resulting free GaN.

Original language	English
Pages (from-to)	L217-L219
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.38.l217
State	Published - 1999

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title = "Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff",

abstract = "Free-standing GaN, nearly equal in area to the original 2 inch wafer, was produced from 250-300 μm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE). The thick films were separated from the growth substrate by laser-induced liftoff, using a pulsed laser to thermally decompose a thin layer of GaN at the film-substrate interface. Sequentially scanned pulses were employed and the liftoff was performed at elevated temperature (>600 °C) to relieve postgrowth bowing. After liftoff, the bow is only slight or absent in the resulting free GaN.",

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T1 - Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff

AU - Kelly, Michael K.

AU - Vaudo, Robert P.

AU - Phanse, Vivek M.

AU - Goergens, Lutz

AU - Ambacher, Oliver

AU - Stutzmann, Martin

PY - 1999

Y1 - 1999

N2 - Free-standing GaN, nearly equal in area to the original 2 inch wafer, was produced from 250-300 μm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE). The thick films were separated from the growth substrate by laser-induced liftoff, using a pulsed laser to thermally decompose a thin layer of GaN at the film-substrate interface. Sequentially scanned pulses were employed and the liftoff was performed at elevated temperature (>600 °C) to relieve postgrowth bowing. After liftoff, the bow is only slight or absent in the resulting free GaN.

AB - Free-standing GaN, nearly equal in area to the original 2 inch wafer, was produced from 250-300 μm thick GaN films grown on sapphire by hydride vapor phase epitaxy (HVPE). The thick films were separated from the growth substrate by laser-induced liftoff, using a pulsed laser to thermally decompose a thin layer of GaN at the film-substrate interface. Sequentially scanned pulses were employed and the liftoff was performed at elevated temperature (>600 °C) to relieve postgrowth bowing. After liftoff, the bow is only slight or absent in the resulting free GaN.

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DO - 10.1143/jjap.38.l217

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SN - 0021-4922

VL - 38

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 3 A

ER -

Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff

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