Large-area single-mode GaSb-based VCSELs using an inverted surface relief

Shamsul Arafin; Alexander Bachmann; Kristijonas Vizbaras; Johan Gustavsson; Anders Larsson; Markus Christian Amann

doi:10.1109/PHOTONICS.2010.5698757

Large-area single-mode GaSb-based VCSELs using an inverted surface relief

Shamsul Arafin, Alexander Bachmann, Kristijonas Vizbaras, Johan Gustavsson, Anders Larsson, Markus Christian Amann

Chair of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Large-area GaSb-based BTJ VCSELs at ∼2.35 μm were fabricated using an inverted surface relief technique to support the single transverse mode operation. The devices operate in continuous-wave and are (electro-)thermally tunable over 6 nm.

Original language	English
Title of host publication	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages	61-62
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTONICS.2010.5698757
State	Published - 2010
Event	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States Duration: 7 Nov 2010 → 11 Nov 2010

Publication series

Name	2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Conference

Conference	23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/Territory	United States
City	Denver, CO
Period	7/11/10 → 11/11/10

Keywords

Single-mode
Surface relief
VCSEL

Access to Document

10.1109/PHOTONICS.2010.5698757

Cite this

Arafin, S., Bachmann, A., Vizbaras, K., Gustavsson, J., Larsson, A., & Amann, M. C. (2010). Large-area single-mode GaSb-based VCSELs using an inverted surface relief. In 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 (pp. 61-62). Article 5698757 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010). https://doi.org/10.1109/PHOTONICS.2010.5698757

@inproceedings{47257a1d55ce45aea2a3bb181f6bb2d2,

title = "Large-area single-mode GaSb-based VCSELs using an inverted surface relief",

abstract = "Large-area GaSb-based BTJ VCSELs at ∼2.35 μm were fabricated using an inverted surface relief technique to support the single transverse mode operation. The devices operate in continuous-wave and are (electro-)thermally tunable over 6 nm.",

keywords = "Single-mode, Surface relief, VCSEL",

author = "Shamsul Arafin and Alexander Bachmann and Kristijonas Vizbaras and Johan Gustavsson and Anders Larsson and Amann, {Markus Christian}",

year = "2010",

doi = "10.1109/PHOTONICS.2010.5698757",

language = "English",

isbn = "9781424453689",

series = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",

pages = "61--62",

booktitle = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",

note = "23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 ; Conference date: 07-11-2010 Through 11-11-2010",

}

Arafin, S, Bachmann, A, Vizbaras, K, Gustavsson, J, Larsson, A & Amann, MC 2010, Large-area single-mode GaSb-based VCSELs using an inverted surface relief. in 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010., 5698757, 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, pp. 61-62, 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010, Denver, CO, United States, 7/11/10. https://doi.org/10.1109/PHOTONICS.2010.5698757

Large-area single-mode GaSb-based VCSELs using an inverted surface relief. / Arafin, Shamsul; Bachmann, Alexander; Vizbaras, Kristijonas et al.
2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010. 2010. p. 61-62 5698757 (2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Large-area single-mode GaSb-based VCSELs using an inverted surface relief

AU - Arafin, Shamsul

AU - Bachmann, Alexander

AU - Vizbaras, Kristijonas

AU - Gustavsson, Johan

AU - Larsson, Anders

AU - Amann, Markus Christian

PY - 2010

Y1 - 2010

N2 - Large-area GaSb-based BTJ VCSELs at ∼2.35 μm were fabricated using an inverted surface relief technique to support the single transverse mode operation. The devices operate in continuous-wave and are (electro-)thermally tunable over 6 nm.

AB - Large-area GaSb-based BTJ VCSELs at ∼2.35 μm were fabricated using an inverted surface relief technique to support the single transverse mode operation. The devices operate in continuous-wave and are (electro-)thermally tunable over 6 nm.

KW - Single-mode

KW - Surface relief

KW - VCSEL

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U2 - 10.1109/PHOTONICS.2010.5698757

DO - 10.1109/PHOTONICS.2010.5698757

M3 - Conference contribution

AN - SCOPUS:79951897090

SN - 9781424453689

T3 - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

SP - 61

EP - 62

BT - 2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

T2 - 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Y2 - 7 November 2010 through 11 November 2010

ER -

Large-area single-mode GaSb-based VCSELs using an inverted surface relief

Abstract

Publication series

Conference

Keywords

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