Large-aperture single-mode GaSb-based BTJ-VCSELs at 2.62 μm

S. Arafin, A. Bachmann, K. Vizbaras, M. C. Amann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

We report on large aperture (DBTJ = 9 μm) GaSb-based BTJ VCSELs at 2.62 μm which show single-mode operation (SMSR > 30 dB) over the entire operating range. Devices are electrically-pumped and operate in continuous-wave mode.

Original languageEnglish
Title of host publication2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages47-48
Number of pages2
DOIs
StatePublished - 2010
Event2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan
Duration: 26 Sep 201030 Sep 2010

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Conference

Conference2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
Country/TerritoryJapan
CityKyoto
Period26/09/1030/09/10

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