Abstract
Photo-oxidation of Ge nanocrystals illuminated with visible laser light under ambient conditions was investigated. The photo-oxidation kinetics were monitored by in situ measurement of the crystalline Ge volume fraction by Raman spectroscopy. The effects of laser power and energy on the extent of oxidation were measured using both in situ and ex situ Raman scattering techniques. A mechanistic model in which the tunneling of photoexcited carriers to the oxide surface for electron activated molecular oxygen dissociation is proposed. This quantitative model describes all experimental photo-oxidation observations using physical parameters.
| Original language | English |
|---|---|
| Article number | 163118 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 16 |
| DOIs | |
| State | Published - 2007 |
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