Irradiated silicon detectors operated at cryogenic temperatures: The Lazarus effect

V. Granata; W. H. Bell; P. Berglund; W. De Boer; E. Borchi; K. Borer; M. Bruzzi; S. Buontempo; L. Casagrande; V. Cindro; S. Chapuy; N. D'Ambrosio; C. Da Viá; S. Devine; B. Dezillie; Z. Dimcovski; V. Eremin; A. Esposito; U. Gambardella; E. Grigoriev; E. Heijne; S. Heising; S. Janos; L. Jungermann; I. Konorov; Z. Li; C. Lourenço; M. Mikuz; T. O. Niinikoski; V. O'Shea; S. Pagano; V. G. Palmieri; S. Paul; S. Pirollo; K. Pretzl; G. Ruggiero; E. Sarnelli; K. Smith; P. Sonderegger; M. Valtonen; E. Verbitskaya; S. Watts; M. Zavrtanik

doi:10.1080/014186300255447

Irradiated silicon detectors operated at cryogenic temperatures: The Lazarus effect

V. Granata
, W. H. Bell
, P. Berglund
, W. De Boer
, E. Borchi
, K. Borer
, M. Bruzzi
, S. Buontempo
, L. Casagrande
, V. Cindro
, S. Chapuy
, N. D'Ambrosio
, C. Da Viá
, S. Devine
, B. Dezillie
, Z. Dimcovski
, V. Eremin
, A. Esposito
, U. Gambardella
, E. Grigoriev

E. Heijne, S. Heising, S. Janos, L. Jungermann, I. Konorov, Z. Li, C. Lourenço, M. Mikuz, T. O. Niinikoski, V. O'Shea, S. Pagano, V. G. Palmieri, S. Paul, S. Pirollo, K. Pretzl, G. Ruggiero, E. Sarnelli, K. Smith, P. Sonderegger, M. Valtonen, E. Verbitskaya, S. Watts, M. Zavrtanik

Chair of Physics I

INFN Sezione di Napoli
Instiuto di Cibernetica E. Caianiello
Brunel University London
University of Glasgow
Helsinki University of Technology
University of Karlsruhe
University of Florence
University of Bern
Laboratório de Instrumentação
Univ. of Ljubljana
University of Geneva
Technical University of Munich
Brookhaven National Laboratory
The Russian Academy of Sciences
Electrotechnical Laboratory
INFN, Laboratori Nazionali Di Frascati
European Organization for Nuclear Research

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

An increasing interest in the behaviour of silicon detectors at cryogenic temperatures has been awakened by the discovery of the so-called Lazarus effect, namely the recovery of charge collection efficiency (CCE) by means of cryogenic cooling. We measured the CCEs of three single diodes previously irradiated with different neutron fluences. The current-voltage characteristic were measured at 300 and 77K, showing that the low-temperature operation considerably decreases the steady-state current. This is also the case when a forward voltage bias is applied, which then becomes a suitable option. At 77 K, in the case of samples irradiated with 5 × 10¹⁴ neutrons cm^-2, the CCE is completely recovered. A third sample irradiated with 2 × 10¹⁵ neutrons cm^-2 shows a 60% CCE at 250 V forward bias.

Original language	English
Pages (from-to)	811-815
Number of pages	5
Journal	Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume	80
Issue number	4
DOIs	https://doi.org/10.1080/014186300255447
State	Published - Apr 2000
Event	International Workshop on Semiconducting and Superconducting Materials - Torino, Italy Duration: 1 Feb 1999 → 1 Feb 1999

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10.1080/014186300255447

Cite this

Granata, V., Bell, W. H., Berglund, P., De Boer, W., Borchi, E., Borer, K., Bruzzi, M., Buontempo, S., Casagrande, L., Cindro, V., Chapuy, S., D'Ambrosio, N., Da Viá, C., Devine, S., Dezillie, B., Dimcovski, Z., Eremin, V., Esposito, A., Gambardella, U., ... Zavrtanik, M. (2000). Irradiated silicon detectors operated at cryogenic temperatures: The Lazarus effect. Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, 80(4), 811-815. https://doi.org/10.1080/014186300255447

@article{704b3c770c7f4b659efb269daa9aeca7,

title = "Irradiated silicon detectors operated at cryogenic temperatures: The Lazarus effect",

abstract = "An increasing interest in the behaviour of silicon detectors at cryogenic temperatures has been awakened by the discovery of the so-called Lazarus effect, namely the recovery of charge collection efficiency (CCE) by means of cryogenic cooling. We measured the CCEs of three single diodes previously irradiated with different neutron fluences. The current-voltage characteristic were measured at 300 and 77K, showing that the low-temperature operation considerably decreases the steady-state current. This is also the case when a forward voltage bias is applied, which then becomes a suitable option. At 77 K, in the case of samples irradiated with 5 × 1014 neutrons cm-2, the CCE is completely recovered. A third sample irradiated with 2 × 1015 neutrons cm-2 shows a 60\% CCE at 250 V forward bias.",

author = "V. Granata and Bell, \{W. H.\} and P. Berglund and \{De Boer\}, W. and E. Borchi and K. Borer and M. Bruzzi and S. Buontempo and L. Casagrande and V. Cindro and S. Chapuy and N. D'Ambrosio and \{Da Vi{\'a}\}, C. and S. Devine and B. Dezillie and Z. Dimcovski and V. Eremin and A. Esposito and U. Gambardella and E. Grigoriev and E. Heijne and S. Heising and S. Janos and L. Jungermann and I. Konorov and Z. Li and C. Louren{\c c}o and M. Mikuz and Niinikoski, \{T. O.\} and V. O'Shea and S. Pagano and Palmieri, \{V. G.\} and S. Paul and S. Pirollo and K. Pretzl and G. Ruggiero and E. Sarnelli and K. Smith and P. Sonderegger and M. Valtonen and E. Verbitskaya and S. Watts and M. Zavrtanik",

year = "2000",

month = apr,

doi = "10.1080/014186300255447",

language = "English",

volume = "80",

pages = "811--815",

journal = "Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties",

issn = "1364-2812",

publisher = "Taylor and Francis Ltd.",

number = "4",

note = "International Workshop on Semiconducting and Superconducting Materials ; Conference date: 01-02-1999 Through 01-02-1999",

}

Granata, V, Bell, WH, Berglund, P, De Boer, W, Borchi, E, Borer, K, Bruzzi, M, Buontempo, S, Casagrande, L, Cindro, V, Chapuy, S, D'Ambrosio, N, Da Viá, C, Devine, S, Dezillie, B, Dimcovski, Z, Eremin, V, Esposito, A, Gambardella, U, Grigoriev, E, Heijne, E, Heising, S, Janos, S, Jungermann, L, Konorov, I, Li, Z, Lourenço, C, Mikuz, M, Niinikoski, TO, O'Shea, V, Pagano, S, Palmieri, VG, Paul, S, Pirollo, S, Pretzl, K, Ruggiero, G, Sarnelli, E, Smith, K, Sonderegger, P, Valtonen, M, Verbitskaya, E, Watts, S & Zavrtanik, M 2000, 'Irradiated silicon detectors operated at cryogenic temperatures: The Lazarus effect', Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, vol. 80, no. 4, pp. 811-815. https://doi.org/10.1080/014186300255447

Irradiated silicon detectors operated at cryogenic temperatures: The Lazarus effect. / Granata, V.; Bell, W. H.; Berglund, P. et al.
In: Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties, Vol. 80, No. 4, 04.2000, p. 811-815.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Irradiated silicon detectors operated at cryogenic temperatures

T2 - International Workshop on Semiconducting and Superconducting Materials

AU - Granata, V.

AU - Bell, W. H.

AU - Berglund, P.

AU - De Boer, W.

AU - Borchi, E.

AU - Borer, K.

AU - Bruzzi, M.

AU - Buontempo, S.

AU - Casagrande, L.

AU - Cindro, V.

AU - Chapuy, S.

AU - D'Ambrosio, N.

AU - Da Viá, C.

AU - Devine, S.

AU - Dezillie, B.

AU - Dimcovski, Z.

AU - Eremin, V.

AU - Esposito, A.

AU - Gambardella, U.

AU - Grigoriev, E.

AU - Heijne, E.

AU - Heising, S.

AU - Janos, S.

AU - Jungermann, L.

AU - Konorov, I.

AU - Li, Z.

AU - Lourenço, C.

AU - Mikuz, M.

AU - Niinikoski, T. O.

AU - O'Shea, V.

AU - Pagano, S.

AU - Palmieri, V. G.

AU - Paul, S.

AU - Pirollo, S.

AU - Pretzl, K.

AU - Ruggiero, G.

AU - Sarnelli, E.

AU - Smith, K.

AU - Sonderegger, P.

AU - Valtonen, M.

AU - Verbitskaya, E.

AU - Watts, S.

AU - Zavrtanik, M.

PY - 2000/4

Y1 - 2000/4

N2 - An increasing interest in the behaviour of silicon detectors at cryogenic temperatures has been awakened by the discovery of the so-called Lazarus effect, namely the recovery of charge collection efficiency (CCE) by means of cryogenic cooling. We measured the CCEs of three single diodes previously irradiated with different neutron fluences. The current-voltage characteristic were measured at 300 and 77K, showing that the low-temperature operation considerably decreases the steady-state current. This is also the case when a forward voltage bias is applied, which then becomes a suitable option. At 77 K, in the case of samples irradiated with 5 × 1014 neutrons cm-2, the CCE is completely recovered. A third sample irradiated with 2 × 1015 neutrons cm-2 shows a 60% CCE at 250 V forward bias.

AB - An increasing interest in the behaviour of silicon detectors at cryogenic temperatures has been awakened by the discovery of the so-called Lazarus effect, namely the recovery of charge collection efficiency (CCE) by means of cryogenic cooling. We measured the CCEs of three single diodes previously irradiated with different neutron fluences. The current-voltage characteristic were measured at 300 and 77K, showing that the low-temperature operation considerably decreases the steady-state current. This is also the case when a forward voltage bias is applied, which then becomes a suitable option. At 77 K, in the case of samples irradiated with 5 × 1014 neutrons cm-2, the CCE is completely recovered. A third sample irradiated with 2 × 1015 neutrons cm-2 shows a 60% CCE at 250 V forward bias.

UR - https://www.scopus.com/pages/publications/18744374135

U2 - 10.1080/014186300255447

DO - 10.1080/014186300255447

M3 - Conference article

AN - SCOPUS:18744374135

SN - 1364-2812

VL - 80

SP - 811

EP - 815

JO - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

JF - Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties

IS - 4

Y2 - 1 February 1999 through 1 February 1999

ER -

Irradiated silicon detectors operated at cryogenic temperatures: The Lazarus effect

Abstract

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