Irradiated silicon detectors operated at cryogenic temperatures: The Lazarus effect

V. Granata, W. H. Bell, P. Berglund, W. De Boer, E. Borchi, K. Borer, M. Bruzzi, S. Buontempo, L. Casagrande, V. Cindro, S. Chapuy, N. d’Ambrosio, C. Da Viá, S. Devine, B. Dezillie, Z. Dimcovski, V. Eremin, A. Esposito, U. Gambardella, E. GrigorievE. Heijne, S. Heising, S. Janos, L. Jungermann, I. Konorov, Z. Li, C. Lourenço, M. Mikuz, T. O. Niinikoski, V. O’Shea, S. Pagano, V. G. Palmieri, S. Paul, S. Pirollo, K. Pretzl, G. Ruggiero, E. Sarnelli, K. Smith, P. Sonderegger, M. Valtonen, E. Verbitskaya, S. Watts, M. Zavrtanik

Research output: Contribution to journalArticlepeer-review

Abstract

An increasing interest in the behaviour of silicon detectors at cryogenic temperatures has been awakened by the discovery of the so-called Lazarus effect, namely the recovery of charge collection efficiency (CCE) by means of cryogenic cooling. We measured the CCEs of three single diodes previously irradiated with different neutron fluences. The current-voltage characteristic were measured at 300 and 77 K, showing that the low-temperature operation considerably decreases the steady-state current. This is also the case when a forward voltage bias is applied, which then becomes a suitable option. At 77 K, in the case of samples irradiated with 5 × 1014 neutrons cm−2, the CCE is completely recovered. A third sample irradiated with 2 × 1015 neutrons cm−2 shows a 60% CCE at 250 V forward bias.

Original languageEnglish
Pages (from-to)811-815
Number of pages5
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume80
Issue number4
DOIs
StatePublished - Apr 2000

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