Ion-induced modulation of channel currents in AIGaN/GaN high-electron-mobility transistors

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Original language	English
Pages (from-to)	R10-R12
Journal	Physica Status Solidi (A) Applied Research
Volume	183
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200102)183:2<R10::AID-PSSA999910>3.0.CO;2-I
State	Published - 2001

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@article{ecc3a624093f4575aa67832b40ad7c81,

title = "Ion-induced modulation of channel currents in AIGaN/GaN high-electron-mobility transistors",

author = "R. Neuberger and G. M{\"u}ller and O. Ambacher and M. Stutzmann",

year = "2001",

doi = "10.1002/1521-396X(200102)183:2<R10::AID-PSSA999910>3.0.CO;2-I",

language = "English",

volume = "183",

pages = "R10--R12",

journal = "Physica Status Solidi (A) Applied Research",

issn = "0031-8965",

publisher = "Wiley-VCH Verlag",

number = "2",

}

TY - JOUR

T1 - Ion-induced modulation of channel currents in AIGaN/GaN high-electron-mobility transistors

AU - Neuberger, R.

AU - Müller, G.

AU - Ambacher, O.

AU - Stutzmann, M.

PY - 2001

Y1 - 2001

UR - https://www.scopus.com/pages/publications/17344384455

U2 - 10.1002/1521-396X(200102)183:2<R10::AID-PSSA999910>3.0.CO;2-I

DO - 10.1002/1521-396X(200102)183:2<R10::AID-PSSA999910>3.0.CO;2-I

M3 - Article

AN - SCOPUS:17344384455

SN - 0031-8965

VL - 183

SP - R10-R12

JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

IS - 2

ER -