Ion-induced modulation of channel currents in AIGaN/GaN high-electron-mobility transistors

R. Neuberger, G. Müller, O. Ambacher, M. Stutzmann

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Original language	English
Pages (from-to)	R10-R12
Journal	Physica Status Solidi (A) Applied Research
Volume	183
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200102)183:2<R10::AID-PSSA999910>3.0.CO;2-I
State	Published - 2001

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title = "Ion-induced modulation of channel currents in AIGaN/GaN high-electron-mobility transistors",

author = "R. Neuberger and G. M{\"u}ller and O. Ambacher and M. Stutzmann",

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T1 - Ion-induced modulation of channel currents in AIGaN/GaN high-electron-mobility transistors

AU - Neuberger, R.

AU - Müller, G.

AU - Ambacher, O.

AU - Stutzmann, M.

PY - 2001

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VL - 183

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JO - Physica Status Solidi (A) Applied Research

JF - Physica Status Solidi (A) Applied Research

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