@inproceedings{a47977f08e424014b3457a1a1b651f19,
title = "Investigation of the thermal noise of MOS transistors under analog and RF operating conditions",
abstract = "We investigate the thermal noise behavior of modern MOS transistors under analog and RF operating conditions. Compared to the noise model used for circuit simulation the measured noise is higher for large gate and drain voltages. This phenomenon is explained by using a new formulation of the classical noise theory which is appropriate for modern short channel devices.",
author = "Ralf Brederlow and Georg Wenig and Roland Thewes",
year = "2002",
doi = "10.1109/ESSDERC.2002.194877",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "87--90",
editor = "Elena Gnani and Giorgio Baccarani and Massimo Rudan",
booktitle = "European Solid-State Device Research Conference",
note = "32nd European Solid-State Device Research Conference, ESSDERC 2002 ; Conference date: 24-09-2002 Through 26-09-2002",
}