TY - JOUR
T1 - Investigation of niobium nitride and oxy-nitride films grown by MOCVD
AU - Bekermann, D.
AU - Barreca, D.
AU - Gasparotto, A.
AU - Becker, H. W.
AU - Fischer, R. A.
AU - Devi, A.
PY - 2009/11/15
Y1 - 2009/11/15
N2 - Niobium nitride (NbN) and niobium oxy-nitride (NbOxNy) thin films were grown by metalorganic chemical vapor deposition (MOCVD) on Si(100) and Si(111) substrates using [Nb(NtBu)(NMe2){C(NiPr)2(NMe2)}2] [NB; tBu = (CH3)3C; Me = CH3; iPr = (CH3)2CH] as a simultaneous Nb and N precursor. While NbN films were synthesized under a pure N2 atmosphere, NbOxNy films were synthesized under N2-O2 flow (N2:O2 = 1-5) in the temperature range 400-600 °C, as well as by NbN deposition followed by ex-situ thermal treatments under flowing O2 at 400-600 °C. The samples were subjected to a multi-technique characterization in order to elucidate the interplay between their structure, morphology and composition and the adopted processing parameters. Particular attention was devoted to the presence of Nb-N and Nb-O-N phases and their distribution in the films, as well as to surface oxidation phenomena. For the first time, niobium oxy-nitride coatings were obtained by CVD starting from the above precursor compound, with growth rates up to 270 Å/min on Si(111) at 600 °C. The films were characterized by a columnar-like/globular morphology when supported on Si(100)/Si(111) and revealed a higher crystallinity on the latter substrate. Surface and in-depth compositional analyses evidenced a limited carbon contamination and the Co-existence of niobium nitride, NbON and Nb2O5. In particular, the presence of the latter in the outermost sample layers was explained by oxidation phenomena occurring upon contact with the outer atmosphere.
AB - Niobium nitride (NbN) and niobium oxy-nitride (NbOxNy) thin films were grown by metalorganic chemical vapor deposition (MOCVD) on Si(100) and Si(111) substrates using [Nb(NtBu)(NMe2){C(NiPr)2(NMe2)}2] [NB; tBu = (CH3)3C; Me = CH3; iPr = (CH3)2CH] as a simultaneous Nb and N precursor. While NbN films were synthesized under a pure N2 atmosphere, NbOxNy films were synthesized under N2-O2 flow (N2:O2 = 1-5) in the temperature range 400-600 °C, as well as by NbN deposition followed by ex-situ thermal treatments under flowing O2 at 400-600 °C. The samples were subjected to a multi-technique characterization in order to elucidate the interplay between their structure, morphology and composition and the adopted processing parameters. Particular attention was devoted to the presence of Nb-N and Nb-O-N phases and their distribution in the films, as well as to surface oxidation phenomena. For the first time, niobium oxy-nitride coatings were obtained by CVD starting from the above precursor compound, with growth rates up to 270 Å/min on Si(111) at 600 °C. The films were characterized by a columnar-like/globular morphology when supported on Si(100)/Si(111) and revealed a higher crystallinity on the latter substrate. Surface and in-depth compositional analyses evidenced a limited carbon contamination and the Co-existence of niobium nitride, NbON and Nb2O5. In particular, the presence of the latter in the outermost sample layers was explained by oxidation phenomena occurring upon contact with the outer atmosphere.
KW - MOCVD
KW - Niobium oxy-nitride
KW - Precursors
KW - Thin films
UR - http://www.scopus.com/inward/record.url?scp=70249083072&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2009.07.029
DO - 10.1016/j.surfcoat.2009.07.029
M3 - Article
AN - SCOPUS:70249083072
SN - 0257-8972
VL - 204
SP - 404
EP - 409
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
IS - 4
ER -