Investigation of in segregation in InAs/AlAs quantum-well structures

M. Schowalter; A. Rosenauer; D. Gerthsen; M. Arzberger; M. Bichler; G. Abstreiter

doi:10.1063/1.1427148

Investigation of in segregation in InAs/AlAs quantum-well structures

M. Schowalter, A. Rosenauer, D. Gerthsen, M. Arzberger, M. Bichler, G. Abstreiter

Natural Sciences

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Abstract

In this letter, we report the investigation of In segregation in InAs/AlAs heterostructures. InAs layers with different thicknesses were grown by molecular beam epitaxy on GaAs (001) substrates. The layers were investigated by transmission electron microscopy. Profiles of the chemical composition of the InAs layers in the [001] direction were deduced from high-resolution lattice fringe images using the composition evaluation by lattice fringe analysis method. The segregation efficiency was derived by fitting the measured In concentration profiles with the segregation model of Muraki et al. [K. Muraki et al., Appl. Phys. Lett. 61, 557 (1992)]. We obtain efficiency of R=0.77±0.03 for the segregation of In in AlAs/InAs at a temperature of 530 °C.

Original language	English
Pages (from-to)	4426-4428
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	26
DOIs	https://doi.org/10.1063/1.1427148
State	Published - 24 Dec 2001

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title = "Investigation of in segregation in InAs/AlAs quantum-well structures",

abstract = "In this letter, we report the investigation of In segregation in InAs/AlAs heterostructures. InAs layers with different thicknesses were grown by molecular beam epitaxy on GaAs (001) substrates. The layers were investigated by transmission electron microscopy. Profiles of the chemical composition of the InAs layers in the [001] direction were deduced from high-resolution lattice fringe images using the composition evaluation by lattice fringe analysis method. The segregation efficiency was derived by fitting the measured In concentration profiles with the segregation model of Muraki et al. [K. Muraki et al., Appl. Phys. Lett. 61, 557 (1992)]. We obtain efficiency of R=0.77±0.03 for the segregation of In in AlAs/InAs at a temperature of 530 °C.",

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T1 - Investigation of in segregation in InAs/AlAs quantum-well structures

AU - Schowalter, M.

AU - Rosenauer, A.

AU - Gerthsen, D.

AU - Arzberger, M.

AU - Bichler, M.

AU - Abstreiter, G.

PY - 2001/12/24

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N2 - In this letter, we report the investigation of In segregation in InAs/AlAs heterostructures. InAs layers with different thicknesses were grown by molecular beam epitaxy on GaAs (001) substrates. The layers were investigated by transmission electron microscopy. Profiles of the chemical composition of the InAs layers in the [001] direction were deduced from high-resolution lattice fringe images using the composition evaluation by lattice fringe analysis method. The segregation efficiency was derived by fitting the measured In concentration profiles with the segregation model of Muraki et al. [K. Muraki et al., Appl. Phys. Lett. 61, 557 (1992)]. We obtain efficiency of R=0.77±0.03 for the segregation of In in AlAs/InAs at a temperature of 530 °C.

AB - In this letter, we report the investigation of In segregation in InAs/AlAs heterostructures. InAs layers with different thicknesses were grown by molecular beam epitaxy on GaAs (001) substrates. The layers were investigated by transmission electron microscopy. Profiles of the chemical composition of the InAs layers in the [001] direction were deduced from high-resolution lattice fringe images using the composition evaluation by lattice fringe analysis method. The segregation efficiency was derived by fitting the measured In concentration profiles with the segregation model of Muraki et al. [K. Muraki et al., Appl. Phys. Lett. 61, 557 (1992)]. We obtain efficiency of R=0.77±0.03 for the segregation of In in AlAs/InAs at a temperature of 530 °C.

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Investigation of in segregation in InAs/AlAs quantum-well structures

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