@inproceedings{712dfe0c185241cd98a61826001ce782,
title = "Investigation of GaAs/AIGaAs quantum well lasers by micro raman spectroscopy",
abstract = "GaAs/AlGaAs quantum well lasers are investigated with non destructive micro Raman spectroscopy. Electronic properties and temperature behaviour at the mirror surfaces were studied by probe lasers with high spatial resolution. Electric field induced Raman scattering (EFIRS) is suitable for observing the band bending, caused by surface states. Temperature behaviour of coated and uncoated mirrors and the spatial temperature profile are investigated by measuring the Stokes- and anti-Stokes intensities of the GaAs TO-phonon. Resonant electronic Raman scattering leads to spatial distribution of carrier densities.",
author = "S. Beeck and T. Egeler and G. Abstreiter and H. Brugger and Epperlein, \{P. W.\} and Webb, \{D. J.\} and C. Hanke and C. Hoyler and L. Korte",
note = "Publisher Copyright: {\textcopyright} 1989 Springer-Verlag Heidelberg. {\textcopyright} 1989 Springer-Verlag Bcrbn Heidelberg. All Rights Reserved.; 19th European Solid State Device Research Conference, ESSDERC 1989 ; Conference date: 11-09-1989 Through 14-09-1989",
year = "1989",
language = "English",
isbn = "9780387510002",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "508--511",
editor = "Heiner Ryssel and Anton Heuberger and Peter Lange",
booktitle = "ESSDERC 1989 - Proceedings of the 19th European Solid State Device Research Conference",
}