Investigation of cross-coupling and parasitic effects in microelectromechanical devices on device and system level

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

With progressing monolithic integration of entire microelectromechanical systems on one chip fabricated by standard IC technology we have to cope with the problem that the operation of embedded transducer elements is considerably affected by cross-coupling and parasitic effects. Referring to a BiCMOS-integrated capacitive pressure sensor as an illustrative example, we demonstrate that a detailed coupled-field analysis on the device level is indispensable to understand the interplay of various effects which contribute to the sensor output. On the basis of this analysis we are able to build a physically-based macromodel for the predictive simulation of the system performance.

Original languageEnglish
Title of host publication2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
EditorsM. Laudon, B. Romanowicz
Pages193-196
Number of pages4
StatePublished - 2000
Event2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000 - San Diego, CA, United States
Duration: 27 Mar 200029 Mar 2000

Publication series

Name2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000

Conference

Conference2000 International Conference on Modeling and Simulation of Microsystems - MSM 2000
Country/TerritoryUnited States
CitySan Diego, CA
Period27/03/0029/03/00

Keywords

  • Coupled-field finite element analysis
  • Cross-coupling effects
  • MEMS
  • Macromodel
  • Small signal analysis

Fingerprint

Dive into the research topics of 'Investigation of cross-coupling and parasitic effects in microelectromechanical devices on device and system level'. Together they form a unique fingerprint.

Cite this