TY - JOUR
T1 - Intrinsic ionic centers in solid Xe
AU - Grigorashchenko, O. N.
AU - Sokolov, O. M.
AU - Savchenko, E. V.
AU - Agreiter, J.
AU - Caspary, N.
AU - Lammers, A.
AU - Bondybey, V. E.
N1 - Funding Information:
The present work was supported by the Deutsche Forschung-sgemeinschaft and the Fonds der Chemischen Industrie.
PY - 1999
Y1 - 1999
N2 - Intrinsic ionic centers in solid Xe have been studied using laser-induced fluorescence technique (LIF). Formation of ionic molecular centers has been revealed in the lattice and condition of their stability has been established. To get insight into the electronic structure and the atomic configuration of ionic centers, a set of experiments has been performed employing Ar and Ne matrices doped with Xe at different concentrations. A LIF band at 2.1-2.2 eV has been observed in the solids under excitation within the range of the absorption band of the emitting centers. A correlation between the intensity of the LIF band - nearly identical to the LIF band in pure solid Xe - and the concentration of Xe dimers expected for statistically distributed impurities in matrices has been found. It suggests that the stable ionic centers in the lattice are formed in a configuration similar to the molecular ions Xe2+ and the structure of self-trapped and trapped holes resembles that of the dimer ions. The identification of the transitions observed has been suggested.
AB - Intrinsic ionic centers in solid Xe have been studied using laser-induced fluorescence technique (LIF). Formation of ionic molecular centers has been revealed in the lattice and condition of their stability has been established. To get insight into the electronic structure and the atomic configuration of ionic centers, a set of experiments has been performed employing Ar and Ne matrices doped with Xe at different concentrations. A LIF band at 2.1-2.2 eV has been observed in the solids under excitation within the range of the absorption band of the emitting centers. A correlation between the intensity of the LIF band - nearly identical to the LIF band in pure solid Xe - and the concentration of Xe dimers expected for statistically distributed impurities in matrices has been found. It suggests that the stable ionic centers in the lattice are formed in a configuration similar to the molecular ions Xe2+ and the structure of self-trapped and trapped holes resembles that of the dimer ions. The identification of the transitions observed has been suggested.
UR - http://www.scopus.com/inward/record.url?scp=0033320379&partnerID=8YFLogxK
U2 - 10.1080/10420159908230155
DO - 10.1080/10420159908230155
M3 - Conference article
AN - SCOPUS:0033320379
SN - 1042-0150
VL - 149
SP - 197
EP - 202
JO - Radiation Effects and Defects in Solids
JF - Radiation Effects and Defects in Solids
IS - 1 -4 pt 1
T2 - Proceedings of the 1998 8th Europhysical Conference on Defects in Insulating Materials, EURODIM 98
Y2 - 6 June 1998 through 11 June 1998
ER -