Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications

Stefan Klein; Friedhelm Finger; Reinhard Carius; Heribert Wagner; Martin Stutzmann

doi:10.1016/S0040-6090(01)01280-9

Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications

Stefan Klein, Friedhelm Finger, Reinhard Carius, Heribert Wagner, Martin Stutzmann

TUM Emeriti of Excellence

Research output: Contribution to journal › Conference article › peer-review

47 Scopus citations

Abstract

The influence of various deposition parameters on the electrical and optical properties and the structure of amorphous and microcrystalline silicon films was investigated for material prepared by hot-wire (HW) CVD in a new multichamber deposition system, designed for the development of thin film solar cells. Prior to the material studies, careful measurement of the real substrate temperature under the influence of additional HW heating was performed. While good electronic quality and solar cell performance was found for a-Si:H layers, the μc-Si:H material showed very high spin densities, porosity and a characteristic structural inhomogeneity along the growth axis.

Original language	English
Pages (from-to)	305-309
Number of pages	5
Journal	Thin Solid Films
Volume	395
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(01)01280-9
State	Published - 3 Sep 2001
Event	Proceedings of the First International Conference on Cat-CVD - Kanazawa, Japan Duration: 14 Nov 2000 → 17 Nov 2000

Keywords

Hot-wire CVD
Silicon
Solar cells
Structural properties

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10.1016/S0040-6090(01)01280-9

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title = "Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications",

abstract = "The influence of various deposition parameters on the electrical and optical properties and the structure of amorphous and microcrystalline silicon films was investigated for material prepared by hot-wire (HW) CVD in a new multichamber deposition system, designed for the development of thin film solar cells. Prior to the material studies, careful measurement of the real substrate temperature under the influence of additional HW heating was performed. While good electronic quality and solar cell performance was found for a-Si:H layers, the μc-Si:H material showed very high spin densities, porosity and a characteristic structural inhomogeneity along the growth axis.",

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T1 - Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications

AU - Klein, Stefan

AU - Finger, Friedhelm

AU - Carius, Reinhard

AU - Wagner, Heribert

AU - Stutzmann, Martin

PY - 2001/9/3

Y1 - 2001/9/3

N2 - The influence of various deposition parameters on the electrical and optical properties and the structure of amorphous and microcrystalline silicon films was investigated for material prepared by hot-wire (HW) CVD in a new multichamber deposition system, designed for the development of thin film solar cells. Prior to the material studies, careful measurement of the real substrate temperature under the influence of additional HW heating was performed. While good electronic quality and solar cell performance was found for a-Si:H layers, the μc-Si:H material showed very high spin densities, porosity and a characteristic structural inhomogeneity along the growth axis.

AB - The influence of various deposition parameters on the electrical and optical properties and the structure of amorphous and microcrystalline silicon films was investigated for material prepared by hot-wire (HW) CVD in a new multichamber deposition system, designed for the development of thin film solar cells. Prior to the material studies, careful measurement of the real substrate temperature under the influence of additional HW heating was performed. While good electronic quality and solar cell performance was found for a-Si:H layers, the μc-Si:H material showed very high spin densities, porosity and a characteristic structural inhomogeneity along the growth axis.

KW - Hot-wire CVD

KW - Silicon

KW - Solar cells

KW - Structural properties

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U2 - 10.1016/S0040-6090(01)01280-9

DO - 10.1016/S0040-6090(01)01280-9

M3 - Conference article

AN - SCOPUS:0035801178

SN - 0040-6090

VL - 395

SP - 305

EP - 309

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the First International Conference on Cat-CVD

Y2 - 14 November 2000 through 17 November 2000

ER -

Intrinsic amorphous and microcrystalline silicon by hot-wire-deposition for thin film solar cell applications

Abstract

Keywords

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