Intersubband Transitions in GaN/Al0.5Ga0.5N Quantum Wells on a-Plane and m-Plane GaN Substrates

Jiaming Xu, Morteza Monavarian, Nishant Nookala, Micha N. Fireman, K. S. Qwah, James S. Speck, Mikhail A. Belkin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We experimentally characterize mid-infrared intersubband transitions in identical Al0.5Ga0.5N/GaN heterostructures grown on a-and m-plane GaN substrates. The absorption peaks of the m-plane samples are 10 to 40% narrower than that of the a-plane samples.

Original languageEnglish
Title of host publication2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580767
StatePublished - May 2020
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States
Duration: 10 May 202015 May 2020

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2020-May
ISSN (Print)1092-8081

Conference

Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/TerritoryUnited States
CitySan Jose
Period10/05/2015/05/20

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