Intersubband dynamics of holes in p-type modulation-doped Si1-xGexSi multiple quantum wells

Robert A. Kaindl; Matthias Wurm; Klaus Reimann; Michael Woerner; Thomas Elsaesser; Christian Miesner; Gerhard Abstreiter

Intersubband dynamics of holes in p-type modulation-doped Si_1-xGe_xSi multiple quantum wells

Robert A. Kaindl, Matthias Wurm, Klaus Reimann, Michael Woerner, Thomas Elsaesser, Christian Miesner, Gerhard Abstreiter

Max Born Institute

Research output: Contribution to conference › Paper › peer-review

Abstract

Femtosecond intersubband spectroscopy provides fundamental insights into the ultrafast nonequilibrium processes of single-component, quasi-two dimensional carrier plasmas. This article discusses the first ultrafast study of hole plasmas in p-type quantum wells using direct intersubband excitation and probing of heavy-hole intersubband transitions.

Original language	English
Pages	265
Number of pages	1
State	Published - 2000
Externally published	Yes
Event	Quantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA Duration: 7 May 2000 → 12 May 2000

Conference

Conference	Quantum Electronics and Laser Science Conference (QELS 2000)
City	San Francisco, CA, USA
Period	7/05/00 → 12/05/00

Cite this

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title = "Intersubband dynamics of holes in p-type modulation-doped Si1-xGexSi multiple quantum wells",

abstract = "Femtosecond intersubband spectroscopy provides fundamental insights into the ultrafast nonequilibrium processes of single-component, quasi-two dimensional carrier plasmas. This article discusses the first ultrafast study of hole plasmas in p-type quantum wells using direct intersubband excitation and probing of heavy-hole intersubband transitions.",

author = "Kaindl, {Robert A.} and Matthias Wurm and Klaus Reimann and Michael Woerner and Thomas Elsaesser and Christian Miesner and Gerhard Abstreiter",

year = "2000",

language = "English",

pages = "265",

note = "Quantum Electronics and Laser Science Conference (QELS 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

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TY - CONF

T1 - Intersubband dynamics of holes in p-type modulation-doped Si1-xGexSi multiple quantum wells

AU - Kaindl, Robert A.

AU - Wurm, Matthias

AU - Reimann, Klaus

AU - Woerner, Michael

AU - Elsaesser, Thomas

AU - Miesner, Christian

AU - Abstreiter, Gerhard

PY - 2000

Y1 - 2000

N2 - Femtosecond intersubband spectroscopy provides fundamental insights into the ultrafast nonequilibrium processes of single-component, quasi-two dimensional carrier plasmas. This article discusses the first ultrafast study of hole plasmas in p-type quantum wells using direct intersubband excitation and probing of heavy-hole intersubband transitions.

AB - Femtosecond intersubband spectroscopy provides fundamental insights into the ultrafast nonequilibrium processes of single-component, quasi-two dimensional carrier plasmas. This article discusses the first ultrafast study of hole plasmas in p-type quantum wells using direct intersubband excitation and probing of heavy-hole intersubband transitions.

UR - http://www.scopus.com/inward/record.url?scp=0034539490&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034539490

SP - 265

T2 - Quantum Electronics and Laser Science Conference (QELS 2000)

Y2 - 7 May 2000 through 12 May 2000

ER -

Intersubband dynamics of holes in p-type modulation-doped Si_1-xGe_xSi multiple quantum wells

Abstract

Conference

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