Interstitial solid solution Hf5GaxSn3 (x = 0-1)

I. Voznyak, Ya Tokaychuk, V. Hlukhyy, T. F. Fässler, R. Gladyshevskii

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Formation of an interstitial solid solution Hf5Ga xSn3 (x = 0-1) based on the binary compound Hf 5Sn3 (structure type Mn5Si3, Pearson symbol hP16, space group P63/mcm, a = 8.36562(6), c = 5.70775(4) from X-ray powder diffraction) was established at 600 °C. The crystal structure (structure type Hf5CuSn3, ordered derivative of Ti5Ga4, hP18, P63/mcm) was refined on X-ray single-crystal diffraction data for three compositions: Hf5Ga 0.16(3)Sn3 (a = 8.3288(12), c = 5.6988(11) ), Hf 5Ga0.53(2)Sn3 (a = 8.4205(12), c = 5.7655(12) ) and Hf5GaSn3 (a = 8.5564(12), c = 5.7859(12) ). The Ga atoms occupy Wyckoff position 2b at the centres of Hf6 octahedral interstices.

Original languageEnglish
Pages (from-to)246-251
Number of pages6
JournalJournal of Alloys and Compounds
Volume512
Issue number1
DOIs
StatePublished - 25 Jan 2012

Keywords

  • Crystal structure
  • Gallium
  • Hafnium
  • Solid solution
  • Tin
  • X-ray diffraction

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