Abstract
Formation of an interstitial solid solution Hf5Ga xSn3 (x = 0-1) based on the binary compound Hf 5Sn3 (structure type Mn5Si3, Pearson symbol hP16, space group P63/mcm, a = 8.36562(6), c = 5.70775(4) from X-ray powder diffraction) was established at 600 °C. The crystal structure (structure type Hf5CuSn3, ordered derivative of Ti5Ga4, hP18, P63/mcm) was refined on X-ray single-crystal diffraction data for three compositions: Hf5Ga 0.16(3)Sn3 (a = 8.3288(12), c = 5.6988(11) ), Hf 5Ga0.53(2)Sn3 (a = 8.4205(12), c = 5.7655(12) ) and Hf5GaSn3 (a = 8.5564(12), c = 5.7859(12) ). The Ga atoms occupy Wyckoff position 2b at the centres of Hf6 octahedral interstices.
Original language | English |
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Pages (from-to) | 246-251 |
Number of pages | 6 |
Journal | Journal of Alloys and Compounds |
Volume | 512 |
Issue number | 1 |
DOIs | |
State | Published - 25 Jan 2012 |
Keywords
- Crystal structure
- Gallium
- Hafnium
- Solid solution
- Tin
- X-ray diffraction