@inproceedings{755c718985064f0fb2e197c29146f29f,
title = "Interpretation of laser absorption measurements on 4H-SiC bipolar diodes by numerical simulation",
abstract = "The interpretation and evaluation of free carrier absorption experiments on SiC devices is essentially supported by computer simulations of the measurement process, which exploits the physical effect that the light absorption coefficient in a semiconductor depends on the electron and hole concentrations. Hence, the attenuation of a laser beam transmitted through a sample is an integral function of the local charge carrier density along the optical path. We investigated time-resolved absorption profiles in 4H-SiC pin-diodes in the high-injection regime at current densities of 100 A/cm2. Based on {"}virtual experiments{"} we studied the factors limiting the spatial resolution or disturbing the absorption signal such as Fabry-Perot interferences.",
keywords = "4H-SiC bipolar diode, Device simulation, Free carrier absorption, Virtual experiment",
author = "D. Werber and G. Wachutka",
year = "2008",
doi = "10.1109/SISPAD.2008.4648244",
language = "English",
isbn = "9781424417537",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "531--534",
booktitle = "2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008",
note = "2008 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2008 ; Conference date: 09-09-2008 Through 11-09-2008",
}