Internal photoemission in GaAs/(AlxGa1-x)As heterostructures

G. Abstreiter; U. Prechtel; G. Weimann; W. Schlapp

doi:10.1016/0378-4363(85)90384-5

Internal photoemission in GaAs/(Al_xGa_1-x)As heterostructures

G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Band offsets in (Al_xGa_1-x)As/GaAs heterostructures are determined using internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and (Al_xGa_1-x)As. Additional onsets occur at photon energies in the infrared region due to internal photoemission from the conduction band in GaAs over the barrier into the conduction band of (Al_xGa_1-x)As and in the near red region where excitations from the GaAs valence band into the (Al_xGa_1-x)As conduction band are involved. From the measured energies we determine ΔE_c/ΔE_g = 0.8 ± 0.03 for x = 0.2.

Original language	English
Pages (from-to)	433-438
Number of pages	6
Journal	Physica B+C
Volume	134
Issue number	1-3
DOIs	https://doi.org/10.1016/0378-4363(85)90384-5
State	Published - Nov 1985

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title = "Internal photoemission in GaAs/(AlxGa1-x)As heterostructures",

abstract = "Band offsets in (AlxGa1-x)As/GaAs heterostructures are determined using internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and (AlxGa1-x)As. Additional onsets occur at photon energies in the infrared region due to internal photoemission from the conduction band in GaAs over the barrier into the conduction band of (AlxGa1-x)As and in the near red region where excitations from the GaAs valence band into the (AlxGa1-x)As conduction band are involved. From the measured energies we determine ΔEc/ΔEg = 0.8 ± 0.03 for x = 0.2.",

author = "G. Abstreiter and U. Prechtel and G. Weimann and W. Schlapp",

year = "1985",

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doi = "10.1016/0378-4363(85)90384-5",

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T1 - Internal photoemission in GaAs/(AlxGa1-x)As heterostructures

AU - Abstreiter, G.

AU - Prechtel, U.

AU - Weimann, G.

AU - Schlapp, W.

PY - 1985/11

Y1 - 1985/11

N2 - Band offsets in (AlxGa1-x)As/GaAs heterostructures are determined using internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and (AlxGa1-x)As. Additional onsets occur at photon energies in the infrared region due to internal photoemission from the conduction band in GaAs over the barrier into the conduction band of (AlxGa1-x)As and in the near red region where excitations from the GaAs valence band into the (AlxGa1-x)As conduction band are involved. From the measured energies we determine ΔEc/ΔEg = 0.8 ± 0.03 for x = 0.2.

AB - Band offsets in (AlxGa1-x)As/GaAs heterostructures are determined using internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and (AlxGa1-x)As. Additional onsets occur at photon energies in the infrared region due to internal photoemission from the conduction band in GaAs over the barrier into the conduction band of (AlxGa1-x)As and in the near red region where excitations from the GaAs valence band into the (AlxGa1-x)As conduction band are involved. From the measured energies we determine ΔEc/ΔEg = 0.8 ± 0.03 for x = 0.2.

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DO - 10.1016/0378-4363(85)90384-5

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AN - SCOPUS:0022148937

SN - 0378-4363

VL - 134

SP - 433

EP - 438

JO - Physica B+C

JF - Physica B+C

IS - 1-3

ER -

Internal photoemission in GaAs/(Al_xGa_1-x)As heterostructures

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