Internal photoemission - a suitable method for determining band offsets in semiconductor heterostructures

G. Abstreiter; U. Prechtel; G. Weimann; W. Schlapp

doi:10.1016/0039-6028(86)90427-9

Internal photoemission - a suitable method for determining band offsets in semiconductor heterostructures

G. Abstreiter, U. Prechtel, G. Weimann, W. Schlapp

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

It is shown that band offsets in semiconductors can be studied by internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and Al_xga_{1 - x}As. The sign of the photocurrent can be related to the signs of the internal electric fields. An additional photocurrent observed at energies between the two gap energies is related to excitations from the GaAs valence band to the Al_xga_{1 - x}As conduction band. Extrapolation of the onset energies to flat-band condition leads to ΔE_c ΔE_g = 0.8 for x = 0.2.

Original language	English
Pages (from-to)	313-317
Number of pages	5
Journal	Surface Science
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(86)90427-9
State	Published - 3 Aug 1986

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title = "Internal photoemission - a suitable method for determining band offsets in semiconductor heterostructures",

abstract = "It is shown that band offsets in semiconductors can be studied by internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and Alxga1 - xAs. The sign of the photocurrent can be related to the signs of the internal electric fields. An additional photocurrent observed at energies between the two gap energies is related to excitations from the GaAs valence band to the Alxga1 - xAs conduction band. Extrapolation of the onset energies to flat-band condition leads to ΔEc ΔEg = 0.8 for x = 0.2.",

author = "G. Abstreiter and U. Prechtel and G. Weimann and W. Schlapp",

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T1 - Internal photoemission - a suitable method for determining band offsets in semiconductor heterostructures

AU - Abstreiter, G.

AU - Prechtel, U.

AU - Weimann, G.

AU - Schlapp, W.

PY - 1986/8/3

Y1 - 1986/8/3

N2 - It is shown that band offsets in semiconductors can be studied by internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and Alxga1 - xAs. The sign of the photocurrent can be related to the signs of the internal electric fields. An additional photocurrent observed at energies between the two gap energies is related to excitations from the GaAs valence band to the Alxga1 - xAs conduction band. Extrapolation of the onset energies to flat-band condition leads to ΔEc ΔEg = 0.8 for x = 0.2.

AB - It is shown that band offsets in semiconductors can be studied by internal photoemission experiments. Onsets in the photocurrent are observed for photon energies exceeding the fundamental energy gaps of GaAs and Alxga1 - xAs. The sign of the photocurrent can be related to the signs of the internal electric fields. An additional photocurrent observed at energies between the two gap energies is related to excitations from the GaAs valence band to the Alxga1 - xAs conduction band. Extrapolation of the onset energies to flat-band condition leads to ΔEc ΔEg = 0.8 for x = 0.2.

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U2 - 10.1016/0039-6028(86)90427-9

DO - 10.1016/0039-6028(86)90427-9

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VL - 174

SP - 313

EP - 317

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Internal photoemission - a suitable method for determining band offsets in semiconductor heterostructures

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