Interfaces in semiconductor/metal radial superlattices

Christoph Deneke; Wilfried Sigle; Ulrike Eigenthaler; Peter A. Van Aken; Gisela Schütz; Oliver G. Schmidt

doi:10.1063/1.2742323

Interfaces in semiconductor/metal radial superlattices

Christoph Deneke, Wilfried Sigle, Ulrike Eigenthaler, Peter A. Van Aken, Gisela Schütz, Oliver G. Schmidt

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Semiconductor/metal radial superlattices are produced by the roll-up of inherently strained InGaAsTiAu as well as InAlGaAsGaAsCr films. Cross sections of the obtained structures are prepared and investigated in detail by diverse transmission electron microscopy as well as microanalysis techniques. Special attention is paid to the interfaces of the semiconductor/metal hybrid superlattice. The study reveals amorphous, noncrystalline layers for the semiconductor/metal as well as for the metal/semiconductor interface. The chemical analysis suggests that the observed interlayers are oxides giving rise to a semiconductor/oxide/metal/oxide superlattice rather than a pure semiconductor/metal superlattice.

Original language	English
Article number	263107
Journal	Applied Physics Letters
Volume	90
Issue number	26
DOIs	https://doi.org/10.1063/1.2742323
State	Published - 2007
Externally published	Yes

Access to Document

10.1063/1.2742323

Cite this

@article{8900ab58ec5e406f90a37b4c407ee826,

title = "Interfaces in semiconductor/metal radial superlattices",

abstract = "Semiconductor/metal radial superlattices are produced by the roll-up of inherently strained InGaAsTiAu as well as InAlGaAsGaAsCr films. Cross sections of the obtained structures are prepared and investigated in detail by diverse transmission electron microscopy as well as microanalysis techniques. Special attention is paid to the interfaces of the semiconductor/metal hybrid superlattice. The study reveals amorphous, noncrystalline layers for the semiconductor/metal as well as for the metal/semiconductor interface. The chemical analysis suggests that the observed interlayers are oxides giving rise to a semiconductor/oxide/metal/oxide superlattice rather than a pure semiconductor/metal superlattice.",

author = "Christoph Deneke and Wilfried Sigle and Ulrike Eigenthaler and {Van Aken}, {Peter A.} and Gisela Sch{\"u}tz and Schmidt, {Oliver G.}",

year = "2007",

doi = "10.1063/1.2742323",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Interfaces in semiconductor/metal radial superlattices

AU - Deneke, Christoph

AU - Sigle, Wilfried

AU - Eigenthaler, Ulrike

AU - Van Aken, Peter A.

AU - Schütz, Gisela

AU - Schmidt, Oliver G.

PY - 2007

Y1 - 2007

N2 - Semiconductor/metal radial superlattices are produced by the roll-up of inherently strained InGaAsTiAu as well as InAlGaAsGaAsCr films. Cross sections of the obtained structures are prepared and investigated in detail by diverse transmission electron microscopy as well as microanalysis techniques. Special attention is paid to the interfaces of the semiconductor/metal hybrid superlattice. The study reveals amorphous, noncrystalline layers for the semiconductor/metal as well as for the metal/semiconductor interface. The chemical analysis suggests that the observed interlayers are oxides giving rise to a semiconductor/oxide/metal/oxide superlattice rather than a pure semiconductor/metal superlattice.

AB - Semiconductor/metal radial superlattices are produced by the roll-up of inherently strained InGaAsTiAu as well as InAlGaAsGaAsCr films. Cross sections of the obtained structures are prepared and investigated in detail by diverse transmission electron microscopy as well as microanalysis techniques. Special attention is paid to the interfaces of the semiconductor/metal hybrid superlattice. The study reveals amorphous, noncrystalline layers for the semiconductor/metal as well as for the metal/semiconductor interface. The chemical analysis suggests that the observed interlayers are oxides giving rise to a semiconductor/oxide/metal/oxide superlattice rather than a pure semiconductor/metal superlattice.

UR - http://www.scopus.com/inward/record.url?scp=34547288338&partnerID=8YFLogxK

U2 - 10.1063/1.2742323

DO - 10.1063/1.2742323

M3 - Article

AN - SCOPUS:34547288338

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263107

ER -

Interfaces in semiconductor/metal radial superlattices

Abstract

Access to Document

Other files and links

Fingerprint

Cite this