Interface roughness scattering and electron mobilities in thin gaas quantum wells

R. Gottinger; A. Gold; G. Abstreiter; G. Weimann; W. Schlapp

doi:10.1209/0295-5075/6/2/015

Interface roughness scattering and electron mobilities in thin gaas quantum wells

R. Gottinger, A. Gold, G. Abstreiter, G. Weimann, W. Schlapp

TUM Emeriti of Excellence

Research output: Contribution to journal › Article › peer-review

104 Scopus citations

Abstract

The mobility of the two-dimensional electron gas in thin GaAs multiple quantum well structures is studied. At low temperatures a strong decrease is found for well widths between 60 Å and 40 Å. This can be explained by interface roughness scattering. The measured electron density dependence of the mobility is used to determine the roughness parameters Λ ≈ 65 Å an Δ ≈ 2.4 Å. The importance of the penetration of the electron wave function into the barrier is discussed.

Original language	English
Pages (from-to)	183-188
Number of pages	6
Journal	Europhysics Letters
Volume	6
Issue number	2
DOIs	https://doi.org/10.1209/0295-5075/6/2/015
State	Published - 15 May 1988

Access to Document

10.1209/0295-5075/6/2/015

Cite this

@article{3b652751d66f4141b89fd53ec9679e9d,

title = "Interface roughness scattering and electron mobilities in thin gaas quantum wells",

abstract = "The mobility of the two-dimensional electron gas in thin GaAs multiple quantum well structures is studied. At low temperatures a strong decrease is found for well widths between 60 {\AA} and 40 {\AA}. This can be explained by interface roughness scattering. The measured electron density dependence of the mobility is used to determine the roughness parameters Λ ≈ 65 {\AA} an Δ ≈ 2.4 {\AA}. The importance of the penetration of the electron wave function into the barrier is discussed.",

author = "R. Gottinger and A. Gold and G. Abstreiter and G. Weimann and W. Schlapp",

year = "1988",

month = may,

day = "15",

doi = "10.1209/0295-5075/6/2/015",

language = "English",

volume = "6",

pages = "183--188",

journal = "Europhysics Letters",

issn = "0295-5075",

publisher = "IOP Publishing Ltd.",

number = "2",

}

TY - JOUR

T1 - Interface roughness scattering and electron mobilities in thin gaas quantum wells

AU - Gottinger, R.

AU - Gold, A.

AU - Abstreiter, G.

AU - Weimann, G.

AU - Schlapp, W.

PY - 1988/5/15

Y1 - 1988/5/15

N2 - The mobility of the two-dimensional electron gas in thin GaAs multiple quantum well structures is studied. At low temperatures a strong decrease is found for well widths between 60 Å and 40 Å. This can be explained by interface roughness scattering. The measured electron density dependence of the mobility is used to determine the roughness parameters Λ ≈ 65 Å an Δ ≈ 2.4 Å. The importance of the penetration of the electron wave function into the barrier is discussed.

AB - The mobility of the two-dimensional electron gas in thin GaAs multiple quantum well structures is studied. At low temperatures a strong decrease is found for well widths between 60 Å and 40 Å. This can be explained by interface roughness scattering. The measured electron density dependence of the mobility is used to determine the roughness parameters Λ ≈ 65 Å an Δ ≈ 2.4 Å. The importance of the penetration of the electron wave function into the barrier is discussed.

UR - http://www.scopus.com/inward/record.url?scp=84956076688&partnerID=8YFLogxK

U2 - 10.1209/0295-5075/6/2/015

DO - 10.1209/0295-5075/6/2/015

M3 - Article

AN - SCOPUS:84956076688

SN - 0295-5075

VL - 6

SP - 183

EP - 188

JO - Europhysics Letters

JF - Europhysics Letters

IS - 2

ER -

Interface roughness scattering and electron mobilities in thin gaas quantum wells

Abstract

Access to Document

Other files and links

Fingerprint

Cite this