Interface roughness in strained Si/SiGe multilayers

A. A. Darhuber; V. Holy; J. Stangl; G. Bauer; J. Nuetzel; G. Abstreiter

Interface roughness in strained Si/SiGe multilayers

A. A. Darhuber
, V. Holy
, J. Stangl
, G. Bauer
, J. Nuetzel
, G. Abstreiter

Johannes Kepler University Linz

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(001) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA), we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.

Original language	English
Pages (from-to)	153-158
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	448
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996

Cite this

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title = "Interface roughness in strained Si/SiGe multilayers",

abstract = "Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(001) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA), we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.",

author = "Darhuber, \{A. A.\} and V. Holy and J. Stangl and G. Bauer and J. Nuetzel and G. Abstreiter",

year = "1997",

language = "English",

volume = "448",

pages = "153--158",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

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TY - JOUR

T1 - Interface roughness in strained Si/SiGe multilayers

AU - Darhuber, A. A.

AU - Holy, V.

AU - Stangl, J.

AU - Bauer, G.

AU - Nuetzel, J.

AU - Abstreiter, G.

PY - 1997

Y1 - 1997

N2 - Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(001) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA), we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.

AB - Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(001) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA), we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.

UR - https://www.scopus.com/pages/publications/0030719653

M3 - Conference article

AN - SCOPUS:0030719653

SN - 0272-9172

VL - 448

SP - 153

EP - 158

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Interface roughness in strained Si/SiGe multilayers

Abstract

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