Abstract
Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(001) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA), we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.
| Original language | English |
|---|---|
| Pages (from-to) | 153-158 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 448 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996 |