Interface phonons in GaAs/AlAs superlattices studied by micro-raman spectroscopy

A. Huber; T. Egeler; W. Ettmüller; H. Rothfritz; G. Tränkle; G. Abstreiter

doi:10.1016/0749-6036(91)90248-P

Interface phonons in GaAs/AlAs superlattices studied by micro-raman spectroscopy

A. Huber
, T. Egeler
, W. Ettmüller
, H. Rothfritz
, G. Tränkle
, G. Abstreiter

TUM Emeriti of Excellence

Walter Schottky Institut

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

In GaAs/AlAs superlattices there exist so-called interface phonons with frequencies in between those of the bulk TO and LO phonon modes. Using micro-Raman spectroscopy we were able to study the energy dispersion of these interface phonons as a function of the in-plane momentum transfer q_II (0≤q_II≤8×10⁵ cm^-1). The results are compared to calculations based on the dielectric continuum model.

Original language	English
Pages (from-to)	309-311
Number of pages	3
Journal	Superlattices and Microstructures
Volume	9
Issue number	3
DOIs	https://doi.org/10.1016/0749-6036(91)90248-P
State	Published - 1991

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10.1016/0749-6036(91)90248-P

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title = "Interface phonons in GaAs/AlAs superlattices studied by micro-raman spectroscopy",

abstract = "In GaAs/AlAs superlattices there exist so-called interface phonons with frequencies in between those of the bulk TO and LO phonon modes. Using micro-Raman spectroscopy we were able to study the energy dispersion of these interface phonons as a function of the in-plane momentum transfer qII (0≤qII≤8×105 cm-1). The results are compared to calculations based on the dielectric continuum model.",

author = "A. Huber and T. Egeler and W. Ettm{\"u}ller and H. Rothfritz and G. Tr{\"a}nkle and G. Abstreiter",

year = "1991",

doi = "10.1016/0749-6036(91)90248-P",

language = "English",

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T1 - Interface phonons in GaAs/AlAs superlattices studied by micro-raman spectroscopy

AU - Huber, A.

AU - Egeler, T.

AU - Ettmüller, W.

AU - Rothfritz, H.

AU - Tränkle, G.

AU - Abstreiter, G.

PY - 1991

Y1 - 1991

N2 - In GaAs/AlAs superlattices there exist so-called interface phonons with frequencies in between those of the bulk TO and LO phonon modes. Using micro-Raman spectroscopy we were able to study the energy dispersion of these interface phonons as a function of the in-plane momentum transfer qII (0≤qII≤8×105 cm-1). The results are compared to calculations based on the dielectric continuum model.

AB - In GaAs/AlAs superlattices there exist so-called interface phonons with frequencies in between those of the bulk TO and LO phonon modes. Using micro-Raman spectroscopy we were able to study the energy dispersion of these interface phonons as a function of the in-plane momentum transfer qII (0≤qII≤8×105 cm-1). The results are compared to calculations based on the dielectric continuum model.

UR - https://www.scopus.com/pages/publications/0025724146

U2 - 10.1016/0749-6036(91)90248-P

DO - 10.1016/0749-6036(91)90248-P

M3 - Article

AN - SCOPUS:0025724146

SN - 0749-6036

VL - 9

SP - 309

EP - 311

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3

ER -

Interface phonons in GaAs/AlAs superlattices studied by micro-raman spectroscopy

Abstract

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