Interface phonons in GaAs/AlAs superlattices studied by micro-raman spectroscopy

A. Huber, T. Egeler, W. Ettmüller, H. Rothfritz, G. Tränkle, G. Abstreiter

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

In GaAs/AlAs superlattices there exist so-called interface phonons with frequencies in between those of the bulk TO and LO phonon modes. Using micro-Raman spectroscopy we were able to study the energy dispersion of these interface phonons as a function of the in-plane momentum transfer qII (0≤qII≤8×105 cm-1). The results are compared to calculations based on the dielectric continuum model.

Original languageEnglish
Pages (from-to)309-311
Number of pages3
JournalSuperlattices and Microstructures
Volume9
Issue number3
DOIs
StatePublished - 1991

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