Interface-phonon dispersion and confined-optical-mode selection rules of GaAs/AlAs superlattices studied by micro-Raman spectroscopy

R. Hessmer, A. Huber, T. Egeler, M. Haines, G. Tränkle, G. Weimann, G. Abstreiter

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

Using micro-Raman spectroscopy, we study backscattering from (010) and (11̄0) surfaces of [001]-grown superlattices and establish experimental selection rules. By changing the momentum transfer q parallel to the superlattice layers over a wide range (0≤q≤9×105 cm-1), we studied the dispersion of the interface phonons. The measured dispersion curves are compared to calculations based on the dielectric-continuum model.

Original languageEnglish
Pages (from-to)4071-4076
Number of pages6
JournalPhysical Review B
Volume46
Issue number7
DOIs
StatePublished - 1992

Fingerprint

Dive into the research topics of 'Interface-phonon dispersion and confined-optical-mode selection rules of GaAs/AlAs superlattices studied by micro-Raman spectroscopy'. Together they form a unique fingerprint.

Cite this