Interface effects in amorphous silicon/nitride multilayers

C. C. Tsai; M. J. Thompson; R. A. Street; M. Stutzmann; F. Ponce

doi:10.1016/0022-3093(85)90828-2

Interface effects in amorphous silicon/nitride multilayers

C. C. Tsai, M. J. Thompson, R. A. Street, M. Stutzmann, F. Ponce

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Abstract

This paper clarifies the role of interfaces on amorphous silicon/nitride superlattice stuctures using TEM, SIMS and ESR measurements. Contrary to the common assumption of atomically sharp interfaces, the interface width is determined to be of the order of ∼10 A ̊, arising from the reactive nature of the plasma. Moreover, our results indicate that there is a high density of charge residing at the interface, causing significant band bending in the multilayers.

Original language	English
Pages (from-to)	995-998
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	77-78
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(85)90828-2
State	Published - 2 Dec 1985
Externally published	Yes

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title = "Interface effects in amorphous silicon/nitride multilayers",

abstract = "This paper clarifies the role of interfaces on amorphous silicon/nitride superlattice stuctures using TEM, SIMS and ESR measurements. Contrary to the common assumption of atomically sharp interfaces, the interface width is determined to be of the order of ∼10 A ̊, arising from the reactive nature of the plasma. Moreover, our results indicate that there is a high density of charge residing at the interface, causing significant band bending in the multilayers.",

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AU - Tsai, C. C.

AU - Thompson, M. J.

AU - Street, R. A.

AU - Stutzmann, M.

AU - Ponce, F.

PY - 1985/12/2

Y1 - 1985/12/2

N2 - This paper clarifies the role of interfaces on amorphous silicon/nitride superlattice stuctures using TEM, SIMS and ESR measurements. Contrary to the common assumption of atomically sharp interfaces, the interface width is determined to be of the order of ∼10 A ̊, arising from the reactive nature of the plasma. Moreover, our results indicate that there is a high density of charge residing at the interface, causing significant band bending in the multilayers.

AB - This paper clarifies the role of interfaces on amorphous silicon/nitride superlattice stuctures using TEM, SIMS and ESR measurements. Contrary to the common assumption of atomically sharp interfaces, the interface width is determined to be of the order of ∼10 A ̊, arising from the reactive nature of the plasma. Moreover, our results indicate that there is a high density of charge residing at the interface, causing significant band bending in the multilayers.

UR - https://www.scopus.com/pages/publications/0022220487

U2 - 10.1016/0022-3093(85)90828-2

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AN - SCOPUS:0022220487

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

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Interface effects in amorphous silicon/nitride multilayers

Abstract

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